onsemi N-Channel Power MOSFET 60 V, 109 A, Enhancement Mode, 8-Pin WDFN Package NVTFS5C658NLTAG

The onsemi NVTFS5C658NLTAG is a high-performance N-channel power MOSFET designed for demanding power electronic circuits requiring high current and voltage handling capabilities. Rated for a maximum continuous drain current of 109 A and a drain-source voltage of 60 V, this enhancement mode MOSFET is optimized for use in industrial, automotive, and commercial electronics applications.

This device is packaged in a compact 8-pin WDFN surface mount package, providing efficient thermal dissipation and space-saving PCB layouts. Its low on-resistance (Rds) of 7.3 milliohms and maximum power dissipation rating of 114 W allow it to manage significant power loads reliably under harsh operating conditions.

Operating over a wide temperature range from -55°C to 175°C, the NVTFS5C658NLTAG is suited for automotive-grade applications, meeting the AEC-Q101 automotive standard. The typical gate charge of 27 nC facilitates efficient switching speeds, while the absolute maximum gate-source voltage rating of 20 V ensures gate protection.

Physical dimensions of 3.15 mm in length and width with a height of 750 micrometers further supports compact, high-density circuit designs. This device is ideal for use in power management stages, DC-DC converters, motor drivers, and other high-current switching circuits requiring robust, efficient MOSFET components.

High continuous drain current of 109 A for demanding power applications. Maximum drain-source voltage of 60 V suitable for medium-voltage designs. Low drain-source resistance of 7.3 mΩ for reduced conduction losses. Enhancement mode channel type ensuring normally-off operation.

8-pin WDFN surface mount package for compact PCB integration. Wide operating temperature range (-55°C to 175°C) for industrial and automotive use. Typical gate charge of 27 nC supports high frequency switching. Automotive-grade AEC-Q101 certified for reliability.

Maximum power dissipation of 114 W supports high thermal loads. Compact dimensions enhance space efficiency in designs.

This semiconductor component is essential for power control in various electrical and electronic industrial equipment, laboratory power systems, construction machinery controls, HVAC systems, and automotive electronics. It facilitates efficient switching and power management in numerous applications requiring high current and voltage capacity.

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