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Nexperia Dual Type P and Type N-Channel Trench MOSFET, 350 mA, 30 V, 6-Pin SC-88 NX3008CBKS,115

Category MOSFETs Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1mm
Length 2.2mm
Model NX3008CBKS,115
Width 1.35mm
Mount Type Surface
Series NX3008CBKS
Maximum Operating Temperature +150°C
Package Type SC-88
Minimum Operating Temperature -55°C
Pin Count 6
Number of Elements per Chip 2
Automotive Standard AEC-Q101
Channel Type Type P, Type N
Maximum Continuous Drain Current Id 350mA
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 4.1Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 990mW
Typical Gate Charge Qg @ Vgs 0.52nC
Maximum Gate Source Voltage Vgs -8, +8V
Forward Voltage Vf 1.2V
Transistor Configuration Dual

Key Features

  • Dual MOSFET transistor configuration with both P and N channel types.
  • Maximum continuous drain current rating of 350 mA ensures stable operation.
  • Low resistance of 4.1 Ω reduces power losses in switching applications.
  • Operates within a temperature range from -55°C to +150°C for broad industrial use.
  • Enhancement mode operation suitable for various power management circuits.
  • Compact SC-88 6-pin surface-mount package with dimensions 2.2 mm length and 1.35 mm width.
  • Maximum power dissipation rating of 990 mW supports moderate power applications.
  • Gate voltage tolerance is between -8 V and +8 V, providing flexibility in gate drive designs.

Product Description

Nexperia NX3008CBKS,115 is a dual Type P and Type N-channel trench MOSFET housed in a compact 6-pin SC-88 package suitable for surface mount technology. It is designed to handle continuous drain currents up to 350 mA and withstand drain-source voltages up to 30 V. Its low on-resistance of 4.1 Ω and gate charge of 0.52 nC at Vgs make it efficient for switching applications in power management and signal amplification.

This device operates in enhancement mode and supports a broad temperature range from -55°C minimum to +150°C maximum, making it ideal for demanding industrial, automotive, and HVAC applications. The dual transistor configuration integrates both P-channel and N-channel MOSFETs in one compact unit, which aids in circuit simplification and space-saving.

The SC-88 package dimensions (2.2 mm length, 1.35 mm width, and 1 mm height) support miniaturized circuit board layouts typical in contemporary electronic equipment. It has a maximum power dissipation of 990 mW, and a gate voltage range of -8 V to +8 V ensures versatile gate drive capability.

Meeting the automotive standard AEC-Q101 underlines its reliability for automotive electronics. The low forward voltage of 1.2 V contributes to reduced energy losses during conduction and enhances efficiency in power circuits.

This MOSFET is widely applicable in industrial electronics, laboratory equipment, automotive systems, manufacturing controls, and other high-reliability semiconductor needs. Its surface-mount design supports automated assembly processes, contributing to cost-effective manufacturing.

Dual transistor configuration with both P and N channel types. Maximum continuous drain current of 350 mA and voltage rating of 30 V. 6-pin SC-88 surface-mount package for compact integration. Compliance with automotive standards ensuring robustness and reliability.

Operating temperature range from -55°C to +150°C for versatility in harsh environments. Suitable for power management, switching, and amplification applications. Low gate charge and on-resistance for efficient operation.

Compact dimensions enable use in miniaturized circuits. Explore more high-quality MOSFETs and semiconductor devices in the Electronics & Electricals category on EnvMart for your industrial, commercial, and laboratory needs.

Nexperia Dual Type P and Type N-Channel Trench MOSFET, 350 mA, 30 V, 6-Pin SC-88 NX3008CBKS,115
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Frequently Asked Questions

The maximum continuous drain current for this model is 350 mA.

It can withstand a maximum drain-source voltage of 30 V.

The on-resistance is rated at 4.1 Ω, which helps reduce power losses in switching applications.

This MOSFET operates within a temperature range from -55°C to +150°C.

The SC-88 package has dimensions of 2.2 mm in length, 1.35 mm in width, and 1 mm in height.

The gate voltage tolerance is between -8 V and +8 V, providing flexibility in gate drive designs.

It complies with the automotive standard AEC-Q101, ensuring reliability for automotive electronics.

This model features a dual transistor configuration with both P-channel and N-channel types.

The maximum power dissipation rating is 990 mW, making it suitable for moderate power applications.

The typical gate charge is 0.52 nC at Vgs, which contributes to its efficiency in switching applications.

It is suitable for power management, switching, and amplification applications in various electronic systems.

This model is designed for surface mounting, which supports automated assembly processes.

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