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ROHM N-Channel Enhancement MOSFET, 3-Pin SOT-723, 200 mA, 50 V, 7.2Ω RUM002N05T2L

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ROHM N-Channel Enhancement MOSFET, 3-Pin SOT-723, 200 mA, 50 V, 7.2Ω RUM002N05T2L

Name: ROHM N-Channel Enhancement MOSFET, 3-Pin SOT-723, 200 mA, 50 V, 7.2Ω RUM002N05T2L
Brand: ROHM
SKU: 301122
Price: 0.13 USD
Availability: InStock

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Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	500μm
Length	1.2mm
Model	RUM002N05T2L
Width	800μm
Mount Type	Surface
Series	RUM002N05
Maximum Operating Temperature	150°C
Package Type	SOT-723
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	200mA
Maximum Drain Source Voltage Vds	50V
Maximum Drain Source Resistance Rds	7.2Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	150mW
Maximum Gate Source Voltage Vgs	-8, +8V
Forward Voltage Vf	1.2V

Key Features

This MOSFET supports enhancement channel mode for improved switching.
Maximum drain-source resistance of 7.2Ω ensures efficient operation.
Equipped with a forward voltage of 1.2 V for low power loss.
Designed for surface mount applications with a small footprint.
Operates across a wide temperature range of -55°C to 150°C for reliable performance.
Maximum power dissipation is 150 mW suitable for low power circuits.
Maximum gate-source voltage tolerance is ±8 V ensuring robustness during switching.
Compact dimensions of 1.2 mm length, 800 μm width, and 500 μm height.

Product Description

The ROHM RUM002N05T2L is a high-quality N-Channel MOSFET transistor designed for compact and efficient electronic circuits. With a maximum continuous drain current rating of 200 mA and a voltage tolerance of 50 V between drain and source, it supports a wide range of low-power enhancing switching applications in consumer electronics and industrial systems.

Housed in the surface mount 3-pin SOT-723 package, this MOSFET offers minimal board space usage, making it ideal for dense PCB layouts. Its enhancement channel mode improves switching characteristics contributing to optimal electrical performance.

The device maintains a low maximum drain-source resistance of 7.2Ω and a forward voltage of 1.2 V, enabling low conduction losses. This contributes to better energy efficiency in power management and signal amplification circuits.

Designed to operate from -55°C to 150°C, the MOSFET ensures durability and reliability in diverse environmental conditions, including automotive and industrial temperature extremes. The device’s maximum power dissipation rating of 150 mW supports applications requiring consistent thermal management.

Its maximum gate-source voltage of ±8 V safeguards the device during switching operations, enhancing robustness. With ultra-compact dimensions - 1.2 mm length, 800 μm width, and 500 μm height - the RUM002N05T2L is perfect for miniature electronic assemblies.

This component is widely used in industrial, automotive, and consumer electronic applications where space-saving and efficient low-power switching MOSFETs are required. This MOSFET supports enhancement channel mode for improved switching.

Maximum drain-source resistance is 7.2Ω for efficient conduction. Forward voltage is 1.2 V minimizing power loss in circuits. Surface mount package suits compact PCB designs. Operates reliably over -55°C to 150°C temperature range.

Maximum power dissipation rating is 150 mW. Gate-source voltage tolerance of ±8 V ensures device protection. Extremely small physical footprint: 1.2 mm × 0.8 mm × 0.5 mm. Explore the full range of ROHM semiconductor components and discover optimal solutions for your electronic circuit design needs at EnvMart.