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Infineon P-Channel MOSFET TO-252 Package 230A 75V Surface Mount 3-Pin AUIRFR5305TR
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | AUIRFR5305TR |
| Mount Type | Surface |
| Series | AUIRFS |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 230A |
| Maximum Drain Source Voltage Vds | 75V |
| Maximum Drain Source Resistance Rds | 3mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Designed specifically for automotive applications with AEC-Q101 certification.
- Utilizes Cellular Planar HEXFET® technology for low on-resistance and high efficiency.
- Supports high continuous drain current of 230 amperes.
- Maximum power dissipation of 81 watts ensures reliable thermal performance.
- Features typical gate charge of 80 nanoCoulombs at 8V gate-source voltage.
- Operating temperature range from -55°C to 175°C for harsh environments.
- Surface mount with 3-pin TO-252 package for compact PCB integration.
- Maximum gate-source voltage rating of 20 volts and forward voltage of 1.3 volts.
Product Description
Infineon AUIRFR5305TR is a high-performance P-Channel MOSFET designed for automotive and industrial applications requiring robust power switching capability. Packaged in a compact TO-252 surface mount format, this device provides a maximum continuous drain current of 230 amperes and can withstand a drain-source voltage up to 75 volts, making it suitable for demanding power electronics circuits.
The MOSFET incorporates advanced Cellular Planar HEXFET® technology to achieve low on-resistance per silicon area, thus reducing conduction losses and increasing system efficiency. Its design also supports a wide operating temperature range from -55°C to 175°C to perform reliably under harsh automotive conditions. The device’s maximum power dissipation rating of 81 watts ensures effective thermal handling.
Featuring a typical gate charge of 80 nanoCoulombs at 8 volts gate-source voltage, it enables fast switching and efficient drive capability. The maximum gate-source voltage is rated at 20 volts, with a forward voltage drop of 1.3 volts, optimizing its switching performance. The low maximum drain-source resistance of 3 milliohms further improves conduction efficiency, vital in power applications.
The AUIRFR5305TR MOSFET is fully RoHS compliant and meets the automotive AEC-Q101 standard, certifying its quality and suitability for automotive electronics. Its 3-pin TO-252 package facilitates surface mounting on compact printed circuit boards, supporting modern electronic design requirements.
This MOSFET finds applications in automotive control modules, power management systems, and industrial power supplies, where high efficiency and reliability are essential. Its robust characteristics make it ideal for switching regulators, load switches, and motor control circuits in demanding environments.
Designed specifically for automotive AEC-Q101 standard adherence. Equipped with advanced Cellular Planar HEXFET® technology for low on-resistance and enhanced efficiency. Capable of handling continuous drain currents of 230A at up to 75V rating.
Supports wide operating temperature of -55°C to 175°C. Surface mount TO-252 package with 3 pins facilitates compact mounting. Low gate charge for fast switching and lower power consumption. Explore additional Infineon semiconductor devices with advanced specifications and automotive-grade reliability for enhanced design solutions at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 230 amperes.
It has a maximum drain-source voltage rating of 75 volts.
This MOSFET operates within a temperature range of -55°C to 175°C.
The device comes in a TO-252 surface mount package.
The typical gate charge is 80 nanoCoulombs at an 8V gate-source voltage.
The maximum power dissipation rating for this model is 81 watts.
The maximum gate-source voltage rating is 20 volts.
The forward voltage drop is rated at 1.3 volts.
The maximum drain-source resistance is 3 milliohms.
This model is compliant with the AEC-Q101 automotive standard.
The country of origin for this MOSFET is India.
It is suitable for automotive control modules, power management systems, and industrial power supplies.
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