Infineon N-Channel MOSFET 180 A Continuous Drain Current 100 V Drain Source Voltage TO-252 Surface Mount IPD95R750P7ATMA1

Infineon IPD95R750P7ATMA1 is a high-current, N-Channel MOSFET designed for surface-mounted power applications requiring robust switching performance and efficient thermal management. This device supports a continuous drain current of 180 A and can withstand drain-source voltages of up to 100 V, making it suitable for demanding industrial and automotive power distribution modules.

Packaged in a TO-252 3-pin surface mount case, the MOSFET offers compact PCB footprint and excellent heat dissipation capabilities. It features a low drain-source resistance of 0.7 mΩ, which helps minimize conduction losses, improving efficiency in power switching systems.

The device's maximum power dissipation is rated at 81 W, balancing high current capability with thermal management. The gate drive requirements are optimized with a typical gate charge of 80 nC at Vgs, allowing for fast switching speeds without excessive gate drive power. The maximum gate-source voltage rating of 20 V provides ample headroom for common gate drive voltages encountered in industrial circuits.

It operates reliably over an extended temperature range from -55°C to +150°C, enabling use in harsh automotive and industrial environments. The IPD95R750P7ATMA1 meets RoHS directives ensuring environmentally compliant manufacturing and conforms to the AEC-Q101 automotive standard, indicating its suitability for automotive system integration.

Applications include automotive power distribution modules, motor drive stages for electrified vehicles, DC-DC converters in high-current power supplies, battery protection and management systems, and industrial inverter power switching tasks where high reliability and efficiency are critical.

This MOSFET supports a maximum continuous drain current of 180 amperes. It handles a maximum drain-source voltage rating of 100 volts. The device features a low on-resistance of 0.7 milliohm to minimize conduction losses.

Designed in a TO-252 surface-mount package with 3 pins for compact PCB layouts. Power dissipation capability up to 81 watts suits high power switching applications. Gate charge of 80 nano-Coulombs ensures balanced switching speed and gate drive requirements.

Gate-source voltage maximum rating is 20 volts, allowing high gate drive margin. Operating temperature range from -55°C to +150°C enables use in demanding environments. Meets RoHS compliance for restricted substance use in electronics.

Qualified to automotive standard AEC-Q101 for reliable automotive applications.

This product is an ideal choice for industrial, automotive, and electronic manufacturing sectors requiring efficient and reliable power switching semiconductors. Browse Infineon MOSFETs and related semiconductor components on EnvMart for comprehensive solutions.