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Infineon IPD N-Channel MOSFET, 180 A Continuous Drain Current, 40 V Drain Source Voltage, TO-252 Surface IPD65R225C7ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPD65R225C7ATMA1 |
| Mount Type | Surface |
| Series | IPD |
| Maximum Operating Temperature | +150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 180A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.2mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- Supports maximum continuous drain current of 180 A for high current applications.
- Maximum drain source voltage of 40 V suitable for medium-voltage circuits.
- Low drain source resistance of 1.2 milliohms minimizes conduction losses.
- Maximum power dissipation of 81 W allows stable operation under load.
- Typical gate charge of 80 nC for efficient switching performance.
- Forward voltage drop of 0.9 V reduces power losses during conduction.
- Wide operating temperature range from -55°C to +150°C ensures reliability in harsh environments.
- Surface mount TO-252 package with 3 pins for easy PCB assembly.
Product Description
Infineon IPD65R225C7ATMA1 is an advanced N-channel MOSFET designed for high-current power switching applications. With a maximum continuous drain current of 180 A and a drain source voltage rating of 40 V, this device is suitable for medium-voltage industrial and automotive environments. Packaged in a TO-252 surface mount format with three pins, it enables compact and efficient circuit designs.
The MOSFET features a low Rds(on) of 1.2 milliohms, which significantly reduces conduction losses and improves overall system efficiency. It supports power dissipation up to 81 W, facilitating stable operation during sustained loads. The device exhibits a typical gate charge of 80 nC, allowing predictable and efficient switching behavior, while its forward voltage drop of 0.9 V minimizes voltage losses under load.
This component operates reliably over an extended temperature range from -55°C to +150°C, making it ideal for demanding industrial, automotive, and power management applications such as DC motor drives, power distribution modules, battery management in electric vehicles, and industrial power converters. The product complies with RoHS directives and holds the automotive-grade AEC-Q101 certification, underscoring its suitability for automotive use.
Supports high continuous current of 180 A for robust power switching. Low on-resistance reduces energy loss and heat generation. Compact TO-252 surface mount package facilitates space-saving PCB layouts. Wide temperature tolerance ensures durability in extreme conditions.
Compliance with RoHS and automotive standards ensures environmental safety and quality.
This MOSFET is well-suited for industrial tools, automotive electronics, HVAC systems, manufacturing equipment, and power management applications requiring compact and high-power semiconductor solutions. Explore more Infineon semiconductor products and discrete MOSFETs on EnvMart for reliable electronic component sourcing.
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Frequently Asked Questions
The maximum continuous drain current for this model is 180 A, making it suitable for high current applications.
This MOSFET has a maximum drain source voltage rating of 40 V, which is appropriate for medium-voltage circuits.
The device features a low drain source resistance of 1.2 milliohms, which helps minimize conduction losses.
It supports a maximum power dissipation of 81 W, allowing stable operation under load conditions.
The typical gate charge is 80 nC, which contributes to its efficient switching performance.
The forward voltage drop for this model is 0.9 V, which reduces power losses during conduction.
It operates reliably over a wide temperature range from -55°C to +150°C, ensuring performance in harsh environments.
This model is packaged in a TO-252 surface mount format with three pins, facilitating easy PCB assembly.
Yes, it complies with RoHS directives and holds the automotive-grade AEC-Q101 certification, making it suitable for automotive applications.
It is well-suited for applications such as DC motor drives, power distribution modules, and battery management in electric vehicles.
The maximum gate source voltage for this MOSFET is 20 V, which is important for ensuring proper operation.
The country of origin for this MOSFET is India.
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