Infineon IPT N-Channel MOSFET, 400 A Continuous Drain Current, 40 V Drain Source Voltage, 8-Pin HSOF-8 IPT60R040S7XTMA1

Infineon IPT60R040S7XTMA1 is a high-performance N-Channel MOSFET designed for demanding electronic and industrial applications. It supports a continuous drain current of 400 A and operates at a maximum drain-source voltage of 40 V. Packaged in a compact 8-pin HSOF-8 surface mount form factor, this device is ideal for modern PCB designs requiring efficient power management.

The device features an exceptionally low maximum drain-source resistance of 1.2 milliohm, which minimizes conduction losses and improves overall energy efficiency. It can dissipate up to 81 W of power, ensuring reliability under heavy load conditions. Its operating temperature range extends from -55°C to 175°C, making it suitable for harsh environments.

With a typical gate charge of 80 nC at the gate-source voltage, the MOSFET provides fast and efficient switching capabilities. The maximum gate-source voltage rating of ±20 V protects the gate oxide and enhances reliability. Additionally, the device exhibits a forward voltage drop of 1 V, optimizing conduction efficiency in various circuits.

This MOSFET complies with RoHS directives, supporting eco-friendly designs, and conforms to the automotive AEC-Q101 qualification standard, demonstrating its robustness for automotive electronic systems.

Surface mount configuration in an 8-pin HSOF-8 package. High continuous drain current rating of 400 A for power-intensive applications. Low Rds(on) reduces heat generation and power loss. Wide operational temperature span for versatile industrial use.

Efficient switching characteristics due to low gate charge. Automotive-grade quality ensured by AEC-Q101 certification. Meets RoHS environmental compliance requirements.

This device is widely used in industrial, automotive, power management, and electronic equipment applications. EnvMart offers this reliable and efficient MOSFET to support your circuit design and manufacturing needs.