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Infineon HEXFET 2 Type P, Type N-Channel MOSFET 4.7A -55V 8-Pin SOIC AUIRF7343QTR
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | AUIRF7343QTR |
| Mount Type | Surface Mount |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 4.7A |
| Maximum Drain Source Voltage Vds | -55V |
| Maximum Drain Source Resistance Rds | 0.11mΩ |
| Maximum Power Dissipation Pd | 2W |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Features ultra-low on-resistance for efficient power management.
- Suitable for automotive applications with 175 °C maximum operating temperature.
- Dual N and P channel MOSFET design enables versatile circuit configurations.
- Surface mount SOIC package with 8 pins ensures compact PCB design.
- Maximum power dissipation of 2 watts supports reliable thermal management.
- Maximum gate-source voltage of 20 volts allows high switching capability.
- Supports fast switching speeds for improved system performance.
- Lead-free and RoHS compliant for environmentally conscious manufacturing.
Product Description
Infineon AUIRF7343QTR is a HEXFET 2 Type P, Type N-Channel MOSFET designed for automotive and general industrial applications. It offers a continuous drain current of 4.7 amperes and a maximum drain-source voltage of -55 volts. Packaged in a compact surface mount 8-Pin SOIC, it integrates dual N and P channel MOSFETs for flexible circuit design.
Constructed with advanced planar technology, the device delivers ultra-low on-resistance maximizing efficiency and minimizing power loss. Its maximum operating temperature is rated at 175 °C, making it suitable for demanding thermal environments common in automotive and power management systems.
The device supports a maximum gate-source voltage of 20 volts and a power dissipation rating of 2 watts, enabling robust switching performance in complex electronics. Its fast switching speed and improved repetitive avalanche rating enhance reliability and longevity.
This MOSFET is lead-free and fully RoHS compliant, meeting current environmental standards for electronics manufacturing. The surface mount SOIC package with 8 pins allows easy integration into circuit boards designed for space-saving applications.
Ultra-low on-resistance for energy-efficient power conversion. Automotive-grade with high-temperature tolerance up to 175 °C. Dual N and P channel MOSFET provides design flexibility. Compact 8-Pin SOIC surface mount package for PCB space savings.
2 W maximum power dissipation supports thermal reliability. Fast switching speed improves system performance. Lead-free and RoHS compliant for environmental safety. Capable of handling 4.7 A drain current and -55 V drain-source voltage.
This MOSFET is ideal for industrial, automotive, and power management applications requiring reliable, high-performance switching devices. Discover more products in the MOSFET category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.7 amperes.
This MOSFET has a maximum drain-source voltage rating of -55 volts.
The maximum operating temperature for this unit is rated at 175 °C.
It is packaged in a compact surface mount 8-Pin SOIC configuration.
The maximum power dissipation for this MOSFET is 2 watts.
The maximum gate-source voltage supported by this model is 20 volts.
The minimum operating temperature for this model is -55 °C.
The forward voltage rating for this MOSFET is -1.2 volts.
It features ultra-low on-resistance, which maximizes efficiency and minimizes power loss during operation.
Yes, it is lead-free and fully RoHS compliant, meeting current environmental standards for electronics manufacturing.
This MOSFET is suitable for automotive and general industrial applications requiring reliable, high-performance switching devices.
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