World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

Infineon IPZ N-Channel MOSFET 40 A 40 V SuperSO8 5 x 6 Surface Mount 8-Pin IPZ40N04S5L2R8ATMA1

Free Delivery in India | Lowest Global Shipping Charges

Infineon IPZ N-Channel MOSFET 40 A 40 V SuperSO8 5 x 6 Surface Mount 8-Pin IPZ40N04S5L2R8ATMA1

Name: Infineon IPZ N-Channel MOSFET 40 A 40 V SuperSO8 5 x 6 Surface Mount 8-Pin IPZ40N04S5L2R8ATMA1
Brand: Infineon
SKU: 300291
Price: 1.84 USD
Availability: InStock



Category MOSFETs Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IPZ40N04S5L2R8ATMA1
Mount Type	Surface
Series	IPZ
Maximum Operating Temperature	175°C
Package Type	SuperSO8 5 x 6
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	40A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	1.4mΩ
Channel Mode	N
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.1V

Key Features

Optimized for automotive and industrial applications with high reliability.
N-channel enhancement mode MOSFET with logic-level gate drive.
Low drain-source resistance of 1.4 mΩ ensures efficient conduction.
Maximum operating temperature up to 175°C supports demanding environments.
High maximum power dissipation of 81 W enables robust thermal management.
Typical gate charge of 80 nC for fast switching performance.
AEC-Q101 automotive standard qualified and 100% avalanche tested for ruggedness.
Forward voltage of 1.1 V suitable for efficient power conversion.

Product Description

Infineon IPZ40N04S5L2R8ATMA1 is an N-channel MOSFET designed for high-performance electronic applications. It supports a maximum continuous drain current of 40 A and a drain-source voltage of 40 V, packaged in a space-saving SuperSO8 5 x 6 mm surface mount format with 8 pins.

This MOSFET operates in enhancement mode with a logic-level gate drive, suitable for modern automotive and industrial electronics requiring efficient power switching. It offers a low Rds(on) of 1.4 mΩ which contributes to minimal conduction losses and improved efficiency.

The device withstands harsh environments with operating temperatures ranging from -55°C to 175°C. Its robust construction is further validated by compliance with the AEC-Q101 automotive standard and 100% avalanche testing, ensuring high reliability in critical applications.

Typical gate charge is 80 nC at 20 V gate voltage, enabling fast switching speeds for improved performance in switching circuits. The MOSFET also features a maximum power dissipation of 81 W and a forward voltage drop of 1.1 V, which balances performance and heat management effectively.

These features make the IPZ40N04S5L2R8ATMA1 ideal for use in industrial machinery, automotive power systems, power management modules, and other embedded control solutions requiring compact, high-efficiency power switching components.

Optimized for automotive and industrial uses requiring high reliability and performance. Surface mount SuperSO8 package facilitates compact PCB design. Extensive thermal and electrical ratings support robust operation. Low gate charge and resistance enhance switching efficiency.

Designed to meet strict automotive quality and testing standards. Explore more products in the MOSFET category for your electronics and power management needs on EnvMart.

Explore more products in our MOSFETs category.