Infineon IAUC Type N-Channel MOSFET, 60 A Continuous Drain Current, 20 V Drain-Source Voltage, Surface IAUC60N04S6N044ATMA1

Infineon IAUC60N04S6N044ATMA1 is a high-performance N-channel enhancement-mode MOSFET designed for automotive and industrial applications requiring robust, high-current switching capabilities. It features a maximum continuous drain current of 60 A and a drain-source voltage rating of 20 V, making it ideal for low-voltage power systems.

This MOSFET comes in a compact 8-pin surface mount SuperSO8 5 x 6 mm package, facilitating easy integration onto printed circuit boards with minimal space requirements. The low on-resistance of 1.4 milliohms significantly reduces conduction losses, enhancing energy efficiency during operation.

Designed to operate in demanding environments, it supports an extensive temperature range from −55 °C to 175 °C. The device's power dissipation capability of 81 W ensures reliable thermal performance under sustained load conditions. The typical gate charge of 80 nC allows for efficient and predictable switching energy, supporting fast switching speeds with minimal energy loss.

The MOSFET features a maximum gate-source voltage rating of 20 V, providing wide drive voltage margins for versatile applications. It has a forward voltage of 1.1 V, balancing performance and efficiency in switching circuits.

Compliant with RoHS directives, this component aligns with modern environmental manufacturing standards. Moreover, it meets the AEC-Q101 automotive qualification, confirming its suitability for automotive electronics that require high reliability under rigorous conditions.

Common industrial uses include DC motor driving in automotive systems, battery management, power distribution, and high-current load switching on control modules. Additionally, it is applicable in power conversion solutions and thermal management systems utilized in harsh operational environments.

Supports high continuous drain current of 60 A for heavy load handling. Low drain-source resistance (Rds) of 1.4 milliohms minimizes conduction losses. Supplied in surface mount 8-pin SuperSO8 5x6 package for compact PCB assembly.

Operates reliably across a wide temperature range from −55°C to 175°C. Power dissipation rating of 81 W enables thermal stability in demanding environments. Typical gate charge of 80 nC ensures predictable switching performance.

Maximum gate-source voltage rating of 20 V allows wide drive margins. Compliant with RoHS standards for restricted substances. Meets AEC-Q101 automotive qualification for vehicle electronics applications. Forward voltage is 1.1 V suitable for efficient switching.

For reliable and efficient semiconductor solutions in automotive and industrial electronics, explore more Infineon MOSFETs and discrete semiconductor components at EnvMart.