Infineon N-Channel MOSFET 212 A, 40 V, 8-Pin SuperSO8 5 x 6 Surface Mount BSZ063N04LS6ATMA1

Infineon BSZ063N04LS6ATMA1 N-Channel MOSFET is a compact and efficient power transistor designed for high current switching tasks in surface-mount assemblies. The device comes in an 8-pin SuperSO8 5 x 6 package optimized for space-saving circuit boards and features a remarkable continuous drain current of 212 A at a maximum drain-source voltage rating of 40 V, making it suitable for medium voltage and high power applications.

With a low on-resistance of 0.7 mΩ, this MOSFET reduces conduction losses significantly and supports a maximum power dissipation of 81 W, ensuring reliable operation under demanding electrical loads. The operating temperature range from -55°C to 175°C allows this component to function effectively in industrial, laboratory, and commercial environments subjected to wide thermal conditions.

The typical gate charge of 80 nC simplifies switching control and enhances efficiency in power conversion circuits. The gate-source voltage rating of 20 V is critical for maintaining device integrity and preventing overstress during operation. This MOSFET conforms to RoHS directives, ensuring compliance with environmental standards and making it suitable for green electronics manufacturing.

Applications include high-current DC-DC converters in compact power supplies, synchronous rectification in server power rails, motor driver circuits requiring robust surface-mount switches, and battery management systems handling substantial continuous current loads. Its surface-mount packaging and excellent electrical characteristics make it a versatile choice for power stage designs where low conduction loss and high reliability are paramount.

Supports a continuous drain current of 212 A with a maximum drain-source voltage of 40 V. Incorporates a low on-resistance of 0.7 mΩ for efficient conduction. Rated for power dissipation of 81 W enabling high-power switching.

Wide operating temperature range from -55°C to 175°C ensures versatility. Typical gate charge of 80 nC allows optimized switching speeds. Gate-source voltage limited to 20 V to prevent damage. Supplied in an 8-pin SuperSO8 5 x 6 surface mount package.

Complies with RoHS environmental standards. Ideal for industrial, laboratory, and commercial power applications. Explore similar Infineon MOSFETs and other semiconductor devices at EnvMart for your electronic component needs.