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Infineon N-Channel MOSFET, 381 A Continuous Drain Current, 40 V Drain Source Voltage, 8-Pin SuperSO8 BSC040N10NS5SCATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC040N10NS5SCATMA1 |
| Mount Type | Surface |
| Series | BSC |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 DSC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Utilizes latest OptiMOS™ 5 technology for improved efficiency.
- Features low on-resistance (0.7 mΩ) to minimize conduction losses.
- Thermally optimized with exposed clip for dual-side cooling and maximum 175°C temperature rating.
- Compact surface mount with standard SuperSO8 5 x 6 DSC footprint.
- Maximum power dissipation rated at 81 W for high-performance applications.
- Supports gate voltage up to 20 V for safe and reliable operation.
- Typical gate charge of 80 nC enhancing switching performance.
- Designed for telecom, server, drive, and high power density systems.
Product Description
Infineon BSC040N10NS5SCATMA1 is a high-performance N-Channel MOSFET leveraging advanced OptiMOS™ 5 technology housed in a compact 8-pin SuperSO8 package with exposed clip for enhanced dual-side heat dissipation. This design effectively lowers thermal resistance, contributing to its high thermal capability up to 175°C and enabling superior power density and efficiency in demanding industrial and electronic applications.
With a continuous drain current rating of 381 A at 40 V drain-source voltage, this MOSFET delivers exceptional current handling capacity suitable for power management in telecom infrastructure, data servers, and motor drives. The device features a low maximum on-resistance of 0.7 mΩ, minimizing conduction losses and improving overall system efficiency.
A maximum power dissipation of 81 W allows operation in high-load environments. The device supports a maximum gate-source voltage of 20 V with a typical gate charge of 80 nC at Vgs, enabling quick and efficient switching performance. The forward voltage drop is approximately 1 V, contributing to low power loss during operation.
Surface mount package conforms to the standard SuperSO8 5 x 6 DSC footprint, ensuring easy integration and drop-in replacement capabilities. The MOSFET complies with RoHS standards, ensuring environmentally friendly manufacturing processes.
Latest OptiMOS™ 5 technology enhances switching and conduction efficiency. Reduced thermal resistance allows for improved heat dissipation. High continuous drain current capability of 381 A at 40 V. Low maximum on-resistance of 0.7 mΩ.
Maximum operating temperature of 175°C for durability under heavy loads. Compact 8-pin SuperSO8 5 x 6 DSC surface mount package. Typical gate charge of 80 nC optimizes switching speed. RoHS compliant design ensures environmental safety.
This MOSFET is ideally suited for use in industrial power supplies, telecommunication power systems, server power modules, HVAC controls, and other high-efficiency power management applications requiring reliable high current switching.
Explore our extensive selection of semiconductors and MOSFET components at EnvMart to meet your industrial and electronics manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 381 A.
This MOSFET has a maximum drain-source voltage of 40 V.
It features a low maximum on-resistance of 0.7 mΩ.
The maximum power dissipation for this MOSFET is rated at 81 W.
The typical gate charge for this model is 80 nC at Vgs.
This unit is housed in a SuperSO8 5 x 6 DSC surface mount package.
The maximum operating temperature is 175°C.
The minimum operating temperature is -55°C and the maximum is 175°C.
It complies with RoHS standards, ensuring environmentally friendly manufacturing processes.
This MOSFET is suited for industrial power supplies, telecommunication power systems, and server power modules among others.
The forward voltage drop is approximately 1 V.
This MOSFET has a pin count of 8.
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