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Nexperia P-Channel MOSFET 22.2 A 30 V Enhancement Mode 8-Pin MLPAK33 PXP6R1-30QLJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXP6R1-30QLJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 22.2A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Features trench MOSFET technology ensuring low threshold voltage operation.
- Designed for high-side load switching and battery management applications.
- Supports DC-to-DC conversion and switching circuits effectively.
- Operates efficiently within a temperature range from -55°C to 175°C.
- Maximum power dissipation rated at 81 W for reliable performance.
- Has a low maximum drain-source resistance of 13.6 mΩ for improved efficiency.
- Enhancement mode channel type with a maximum gate-source voltage of 20 V.
- Compact 8-pin MLPAK33 package suitable for surface mounting on PCBs.
Product Description
The Nexperia PXP6R1-30QLJ is a high-performance P-Channel MOSFET designed for discrete semiconductor applications. Featuring enhancement mode operation with trench MOSFET technology, it provides a low threshold voltage and excellent efficiency in power switching tasks.
It supports a maximum continuous drain current of 22.2 A and a maximum drain-source voltage of 30 V, making it suitable for high-side load switch designs and battery management systems. The device is housed in an 8-pin MLPAK33 surface-mounted package, which allows for compact PCB layouts and ease of assembly.
Its rugged construction supports operation over a wide temperature range, from -55°C to 175°C, and has a maximum power dissipation of 81 W. The MOSFET also features a low on-resistance (Rds) of 13.6 mΩ, optimizing power efficiency in switching circuits.
Typical applications include DC-to-DC converters, switching regulators, and other electronic circuits requiring robust and efficient P-channel MOSFETs. The device's design meets industry needs for reliability and high performance in industrial, consumer electronics, and automotive sectors where no specific automotive standards apply.
Features trench MOSFET technology ensuring low threshold voltage operation. Designed for high-side load switching and battery management applications. Supports DC-to-DC conversion and switching circuits effectively. Operates efficiently within a temperature range from -55°C to 175°C.
Maximum power dissipation rated at 81 W for reliable performance. Has a low maximum drain-source resistance of 13.6 mΩ for improved efficiency. Enhancement mode channel type with a maximum gate-source voltage of 20 V. Compact 8-pin MLPAK33 package suitable for surface mounting on PCBs.
This Nexperia MOSFET is a reliable choice for engineers and technicians engaged in designing power management and switching circuits. Explore more products in the MOSFET category on EnvMart for your industrial and commercial electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 22.2 A.
It has a maximum drain-source voltage of 30 V.
This model operates efficiently within a temperature range from -55°C to 175°C.
The maximum power dissipation rated for this model is 81 W.
The maximum gate-source voltage for this MOSFET is 20 V.
It features a low maximum drain-source resistance of 13.6 mΩ, which improves efficiency.
This model is housed in a compact 8-pin MLPAK33 package suitable for surface mounting on PCBs.
It is designed for high-side load switching, battery management applications, and supports DC-to-DC conversion and switching circuits.
This model features an enhancement mode channel type.
The pin count for this model is 8.
The country of origin for this model is India.
It features trench MOSFET technology, ensuring low threshold voltage operation.
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