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Nexperia P-Channel MOSFET 10.3A 30V Enhancement Mode 8-Pin MLPAK33 PXP013-30QLJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXP013-30QLJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 10.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Features enhancement mode operation for precise switching control.
- Compact 8-pin MLPAK33 surface-mount package suitable for space-constrained PCB design.
- Maximum power dissipation of 81 W ideal for high-efficiency applications.
- Operates reliably between -55°C to 175°C ambient temperature range.
- Low maximum drain-source resistance of 13.6 mΩ for reduced power loss.
- Supports maximum gate-source voltage of ±20 V ensuring robust signal tolerance.
- Utilizes Trench MOSFET technology delivering low threshold voltage.
- Designed for high-side load switching, battery management, and DC/DC conversion circuits.
Product Description
The Nexperia PXP013-30QLJ is a Type P-Channel MOSFET featuring Enhancement mode operation within a compact 8-pin MLPAK33 surface-mount plastic package utilizing advanced Trench MOSFET technology. It supports a maximum continuous drain current of 10.3 A and maximum drain-source voltage of 30 V, optimized for efficient switching and power management.
This device offers low threshold voltage and a low maximum drain-source resistance of 13.6 mΩ, resulting in reduced conduction losses. Its robust design enables a maximum power dissipation of 81 W and operating temperature range from -55°C up to 175°C, making it suitable for demanding industrial environments.
Typical applications include high-side load switching, battery management systems, and DC-to-DC converters where space, power efficiency, and thermal performance are critical. The package design supports surface mounting which facilitates automated assembly and compact PCB layouts.
Key technical features include a maximum gate-source voltage of ±20 V and the use of Trench technology to ensure reliable switching performance. This MOSFET does not carry specific industry certifications or automotive ratings but is designed for general purpose and industrial semiconductor use.
Set contains 1 PXP013-30QLJ MOSFET device in an 8-pin MLPAK33 package, ready for integration into electronic circuits requiring P-Channel MOSFET capability. Features enhancement mode operation for precise switching control.
Compact 8-pin MLPAK33 surface-mount package suitable for space-constrained PCB design. Maximum power dissipation of 81 W ideal for high-efficiency applications. Operates reliably between -55°C to 175°C ambient temperature range.
Low maximum drain-source resistance of 13.6 mΩ for reduced power loss. Supports maximum gate-source voltage of ±20 V ensuring robust signal tolerance. Utilizes Trench MOSFET technology delivering low threshold voltage. Designed for high-side load switching, battery management, and DC/DC conversion circuits.
Suitable for industrial, automotive, and power management applications. Explore more Nexperia semiconductor and MOSFET products through EnvMart for your industrial and electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for the PXP013-30QLJ is 10.3 A.
This MOSFET can handle a maximum drain-source voltage of 30 V.
It has a maximum power dissipation rating of 81 W, making it suitable for high-efficiency applications.
The operating temperature range for this model is from -55°C to 175°C.
The maximum gate-source voltage supported by the PXP013-30QLJ is ±20 V.
This model comes in an 8-pin MLPAK33 surface-mount package.
The maximum drain-source resistance is 13.6 mΩ, which helps reduce power loss.
This device features a Type P channel, utilizing enhancement mode operation.
This MOSFET is designed for high-side load switching, battery management systems, and DC-to-DC converters.
It utilizes Trench MOSFET technology, which delivers low threshold voltage and efficient switching performance.
This model has a pin count of 8.
Yes, the surface-mount design of the MLPAK33 package facilitates automated assembly and compact PCB layouts.
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