Infineon iPB N-Channel MOSFET, 273 A, 100 V, 3-Pin TO-263 Surface Mount Package IPB60R045P7ATMA1

Infineon IPB60R045P7ATMA1 N-Channel MOSFET is engineered for high efficiency and robust performance in semiconductor applications requiring a maximum continuous drain current of 273 A and maximum drain-source voltage of 100 V. Packaged in a TO-263 surface mount design with 3 pins, it fits compactly into circuits.

This device features an exceptionally low on-resistance of 1.7 milliohms and a maximum gate-source voltage of 20 V, making it ideal for power management in industrial, automotive, and power electronics systems. Its outstanding commutation ruggedness supports both hard and soft switching modes, suitable for power factor correction (PFC) and LLC resonant converters.

The MOSFET supports a maximum power dissipation of 81 W and operates reliably over a temperature range from -55°C to 175°C, meeting stringent automotive grade AEC-Q101 standards and RoHS compliance. A typical gate charge of 80 nC enables efficient switching performance, optimizing energy consumption.

Applications encompass industrial power management, automotive electronics, and high efficiency power supplies. The device demonstrates excellent electrostatic discharge robustness beyond 2 kV (HBM), ensuring durability in demanding environments.

Infineon's iPB series continues to build on the legacy of CoolMOS™ technology, focusing on balancing efficiency with ease of integration. This makes the IPB60R045P7ATMA1 a preferred choice for advanced electronic component design.

Equipped with a TO-263 surface mount package and 3 pins for compact application. Features low on-resistance of 1.7 milliohms ensuring energy efficient operation. Suitable for hard and soft switching with robust 20 V maximum gate-source voltage tolerance.

High power dissipation capacity of 81 W enabling reliable performance under load. Wide operating temperature range from -55°C to 175°C for industrial and automotive use. AEC-Q101 automotive standard certified and RoHS compliant for quality assurance.

Low typical gate charge of 80 nC facilitating fast switching speeds. High forward voltage of 1.2 V supporting effective conduction control. Designed for applications including Power Factor Correction (PFC), LLC converters, and general switching scenarios.

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