Infineon iPB N-Channel MOSFET, 100 V, 273 A Continuous Drain Current, 3-Pin TO-263 Surface Mount IPB048N15N5LFATMA1

Infineon IPB048N15N5LFATMA1 is a high-performance N-Channel MOSFET designed for power switching applications requiring high current and voltage capabilities. This device provides a maximum continuous drain current of 273 A and withstands a drain-source voltage of up to 100 V. Packaged in a TO-263 surface mount format, it allows efficient heat dissipation on the PCB, making it ideal for thermal management in demanding systems.

The MOSFET features a low on-resistance of 1.7 milliohms, which significantly reduces conduction losses and improves efficiency. It supports a maximum power dissipation of 81 W, enabling operation under substantial loads. The device has a typical gate charge of 80 nC, contributing to predictable and low-loss switching performance. A forward diode voltage of 1.2 V ensures minimal conduction drop during intrinsic diode current flow.

Operating across a wide ambient temperature range from -55°C to +150°C, the Infineon iPB series MOSFETs are suitable for use in harsh industrial, automotive, and commercial environments. The maximum gate-source voltage must not exceed 20 V to ensure gate reliability.

This MOSFET is suitable for applications such as high-current power supplies, motor drive stages, server power distribution, telecom rectifiers, and industrial switching where reliable high-power and high-speed switching are critical.

High current handling capability for heavy loads. Robust voltage rating for high-voltage switching. Low conduction losses ensuring enhanced efficiency. Surface mount package for effective thermal management. Wide temperature tolerance for extreme environments.

RoHS compliant for environmental safety. Explore more components in the MOSFET category to find additional power management solutions suitable for industrial, commercial, and electronic design applications.