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Infineon iPB Series N-Channel MOSFET 100 V, 273 A Continuous Drain Current, 81 W Power Dissipation, 3-Pin IPB048N15N5ATMA1

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Infineon iPB Series N-Channel MOSFET 100 V, 273 A Continuous Drain Current, 81 W Power Dissipation, 3-Pin IPB048N15N5ATMA1

Name: Infineon iPB Series N-Channel MOSFET 100 V, 273 A Continuous Drain Current, 81 W Power Dissipation, 3-Pin IPB048N15N5ATMA1
Brand: Infineon
SKU: 299267
Price: 6.8 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IPB048N15N5ATMA1
Mount Type	Surface
Series	iPB
Maximum Operating Temperature	175°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	273A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	1.7mΩ
Channel Mode	N
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

This device offers a low on-resistance of 1.7 mΩ to reduce conduction losses and improve efficiency.
It supports a maximum power dissipation of 81 W, enabling sustained thermal operation.
The package type is TO-263 suited for surface mounting on PCBs in compact assemblies.
Operates reliably at temperatures ranging from −55°C to 175°C for demanding environments.
Typical gate charge is 80 nC with a maximum gate-source voltage rating of 20 V.
Forward voltage drop is 1.2 V, helping maintain efficient switching.
The product complies with RoHS standards but is not automotive-grade certified.

Product Description

Infineon IPB048N15N5ATMA1 is a high-current N-channel MOSFET built for efficient conduction and robust thermal management in power electronic applications. It features a 100 V maximum drain-source voltage and can continuously handle drain currents up to 273 A, making it ideal for heavy-load switching scenarios.

Housed in a TO-263 surface-mount package, this MOSFET provides a compact footprint with excellent heat dissipation properties. The low on-resistance of 1.7 mΩ significantly reduces power losses, thereby improving circuit efficiency.

Its wide operating temperature range from −55 °C to 175 °C enables reliable performance in harsh industrial and electronic environments such as inverters, motor drives, and power supply synchronous rectification.

The typical gate charge of 80 nC and 20 V maximum gate-source voltage accommodate efficient gate driving and switching speed control for various applications.

This device is well-suited for high-current power conversion stages, motor-drive circuits, synchronous-rectification topologies, and battery-management systems where surface-mount components are desired for board-mounted switch modules.

Low conduction losses due to 1.7 mΩ Rds(on). High continuous current handling of 273 A. TO-263 package provides excellent thermal dissipation. Wide operation from −55 °C to 175 °C. Gate-source voltage up to 20 V with 80 nC gate charge.

Forward voltage of 1.2 V for efficient switching. RoHS compliant component.

Infineon’s iPB series MOSFETs are designed for industrial, power electronics, manufacturing, and HVAC applications that require reliable and efficient power switching and dissipation solutions. Suitable for engineers designing compact, high-load switching modules.

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