Infineon N-Channel MOSFET 253 A 30 V 8-Pin PQFN Surface Mount IQE006NE2LM5CGATMA1

Infineon's IQE006NE2LM5CGATMA1 is a high-performance N-Channel MOSFET designed for demanding power applications. This device operates at a continuous drain current of 253 A and a maximum drain-source voltage of 30 V, packaged in a compact 8-pin PQFN surface mount format. It supports efficient power management with a maximum power dissipation rating of 81 W and a very low drain-source resistance of 1.2 milliohms, which minimizes conduction losses.

The MOSFET operates reliably across a wide temperature range from -55°C to 175°C, making it suitable for harsh industrial environments. It features a maximum gate-source voltage rating of 20 V and a typical gate charge of 80 nC at Vgs, facilitating high-speed switching performance essential for power conversion and control applications.

Manufactured using Infineon's OptiMOS 5 technology, this transistor undergoes 100% avalanche testing for robustness and has Pb-free lead plating adhering to environmental standards. It is RoHS compliant and meets the Automotive Standard AEC-Q101, ensuring quality for automotive and industrial applications.

The device's compact 3.3 mm length and 8-pin PQFN package configuration enable integration in space-constrained PCB layouts, contributing to lighter and smaller power systems. This surface mount MOSFET features a maximum power dissipation of 81 W.

It has a low drain-source resistance of 1.2 milliohms enhancing efficiency. The device maintains operation between -55°C and 175°C temperature range. Maximum gate-source voltage of ±20 V supports robust switching. Typical gate charge is 80 nC at Vgs, enabling fast switching speeds.

Infineon's OptiMOS 5 technology ensures 100% avalanche testing and Pb-free lead plating. Compliant with RoHS and Automotive Standard AEC-Q101 for industrial reliability. Device length is compact at 3.3 mm, suitable for dense PCB designs.

This MOSFET is commonly used in industrial, automotive, and power management systems requiring robust, efficient switching under high current and voltage conditions. Explore additional Infineon power MOSFETs and related semiconductor components at EnvMart for your electronic design and manufacturing needs.