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Infineon BSC N-Channel MOSFET, 381 A, 30 V, 8-Pin SuperSO8 5x6 Package BSC430N25NSFDATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model BSC430N25NSFDATMA1
Mount Type Surface
Series BSC
Maximum Operating Temperature 175°C
Package Type SuperSO8 5 x 6
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 381A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 0.7mΩ
Channel Mode N
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Designed with SuperSO8 5x6 mm package providing compact surface mounting.
  • Maximum drain-source voltage is 30 V optimized for low voltage systems.
  • Extremely low on-resistance of 0.7 milliohm reduces power dissipation.
  • Typical gate charge of 80 nC allows efficient fast switching.
  • Maximum power dissipation rated at 81 W ensures robust performance.
  • Operating temperature range from -55°C up to 175°C for harsh environments.
  • Features lead-free Pb-free plating and complies with RoHS environmental standards.
  • Ideal for automotive and industrial high frequency switching and synchronous rectification.

Product Description

Infineon BSC430N25NSFDATMA1 is a state-of-the-art N-Channel MOSFET designed for high power and high frequency switching applications. Packaged in a compact 8-Pin SuperSO8 5x6 mm form factor, it is optimized for surface mounting in automotive and industrial electronic systems requiring efficient power management.

This MOSFET supports a continuous drain current rating of 381 A and a maximum drain-source voltage of 30 V, making it suitable for a variety of low voltage power switching scenarios. Its very low on-resistance of 0.7 milliohm minimizes conduction losses, thereby improving overall system efficiency.

With a typical gate charge of 80 nC at Vgs, this device enables fast switching speeds essential for synchronous rectification and high-frequency operations. The maximum power dissipation rating of 81 W and a wide operating temperature range from -55°C to 175°C make this MOSFET highly reliable under demanding thermal conditions.

The component features Pb-free lead plating to meet RoHS and halogen-free standards (IEC 61249-2-21), supporting environmentally conscious manufacturing processes. Despite lacking specific automotive standard certification, it is well-suited to automotive-grade circuits due to its robust specifications and reliability.

Applications for the Infineon BSC430N25NSFDATMA1 MOSFET include industrial power supplies, motor control circuits, battery management systems, and high-performance DC-DC converters.

Compact 8-Pin SuperSO8 5x6 mm surface mount package. High continuous drain current capability of 381 A. Maximum drain-source voltage of 30 V for low voltage applications. Very low Rds(on) at 0.7 milliohm reduces conduction losses.

Typical gate charge of 80 nC enables efficient switching. Robust power dissipation rating at 81 W. Wide operating temperature range from -55°C to 175°C. Lead-free, RoHS and halogen-free compliant construction. Explore more Infineon MOSFETs and semiconductor components at EnvMart for your industrial, automotive, and electronic design needs.

Infineon BSC N-Channel MOSFET, 381 A, 30 V, 8-Pin SuperSO8 5x6 Package BSC430N25NSFDATMA1
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Frequently Asked Questions

The maximum continuous drain current for the Infineon BSC430N25NSFDATMA1 is 381 A.

This model has a maximum drain-source voltage rating of 30 V, making it suitable for low voltage applications.

The on-resistance (Rds(on)) of the BSC430N25NSFDATMA1 is very low at 0.7 milliohm, which helps to reduce conduction losses.

The typical gate charge for this MOSFET at Vgs is 80 nC, facilitating efficient switching.

The maximum power dissipation rating for this unit is 81 W, ensuring robust performance in various applications.

It operates within a temperature range of -55°C to 175°C, suitable for harsh environments.

The BSC430N25NSFDATMA1 is designed for surface mounting, packaged in an 8-Pin SuperSO8 5x6 mm format.

This model complies with RoHS environmental standards and features lead-free, halogen-free construction.

It is suitable for applications such as industrial power supplies, motor control circuits, battery management systems, and high-performance DC-DC converters.

The package type for the BSC430N25NSFDATMA1 is SuperSO8 5 x 6 mm.

The maximum gate-source voltage (Vgs) for this MOSFET is 20 V.

The forward voltage (Vf) rating for the BSC430N25NSFDATMA1 is 1 V.

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