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Infineon N-Channel MOSFET, 381 A Continuous Drain Current, 40 V Drain Source Voltage, 8-Pin SuperSO8 BSC010N04LS6ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model BSC010N04LS6ATMA1
Mount Type Surface
Series BSC0
Maximum Operating Temperature 175°C
Package Type SuperSO8 5 x 6
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 381A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 0.7mΩ
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • This MOSFET offers a low 0.7 milliohm drain-source resistance to minimize conduction losses.
  • It supports high power dissipation up to 81 W, ensuring reliable operation during heavy loads.
  • The device operates over a wide temperature range from -55 °C to 175 °C for demanding industrial applications.
  • Typical gate charge of 80 nC reduces switching losses and drive stress.
  • A gate-source voltage rating of 20 V protects the device from overvoltage damage.
  • The 8-pin SuperSO8 5 x 6 package supports compact surface mounting on PCBs.
  • It is RoHS compliant for environmental safety and sustainability.
  • Ideal for high-current DC-DC converters, motor-drive stages, synchronous rectification, and load switching.

Product Description

Infineon BSC010N04LS6ATMA1 is an N-channel power MOSFET designed for high current power switching applications. It supports a maximum continuous drain current of 381 A and a drain-source voltage rating of 40 V, allowing it to handle demanding power loads efficiently. Its low on-resistance of 0.7 mΩ minimizes conduction losses, which is essential for energy-efficient circuits.

The device is housed in a compact SuperSO8 5 x 6 surface mount package with 8 pins, enabling easy integration on modern PCBs. It can dissipate up to 81 W of power and operates safely within a broad temperature range from -55 to 175 °C, making it suitable for harsh industrial and automotive environments.

The typical gate charge of 80 nC results in reduced switching losses and less stress on the driver circuits. Its gate-source voltage maximum rating of 20 V provides robust protection against voltage spikes.

This MOSFET is compliant with RoHS standards, reflecting environmental compliance. It is particularly suitable for high-current DC-DC converters in power systems, motor drive stages needing high current capacity, power-distribution modules in industrial equipment, synchronous rectification in supply designs, and load switching under harsh temperature conditions.

381 A continuous drain current delivers high-load performance for power circuits. 40 V drain-source voltage rating supports medium-voltage switching. 0.7 mΩ Rds(on) reduces conduction losses significantly. 81 W power dissipation enables elevated power throughput.

Wide operating temperature range from -55 °C to 175 °C. Compact 8-pin SuperSO8 package supports space-saving PCB mounting. RoHS compliance ensures environmental safety. Ideal for automotive, industrial power management, DC-DC conversion, and motor drives.

This high-performance MOSFET is an excellent choice for engineers seeking efficient, compact, and reliable power switching components. Explore more Infineon products and solutions on EnvMart for your semiconductor requirements.

Infineon N-Channel MOSFET, 381 A Continuous Drain Current, 40 V Drain Source Voltage, 8-Pin SuperSO8 BSC010N04LS6ATMA1
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Frequently Asked Questions

The maximum continuous drain current of this model is 381 A, allowing it to handle demanding power loads efficiently.

This MOSFET has a drain-source voltage rating of 40 V, suitable for medium-voltage switching applications.

The on-resistance (Rds(on)) of this unit is 0.7 mΩ, which helps minimize conduction losses in power circuits.

It can dissipate up to 81 W of power, ensuring reliable operation during heavy loads.

The operating temperature range for this device is from -55 °C to 175 °C, making it suitable for harsh industrial environments.

This model is housed in a SuperSO8 5 x 6 surface mount package with 8 pins, allowing for compact PCB integration.

The typical gate charge for this device is 80 nC, which reduces switching losses and driver stress.

The maximum gate-source voltage rating for this model is 20 V, providing protection against overvoltage damage.

Yes, this device is RoHS compliant, reflecting its adherence to environmental safety standards.

It is ideal for high-current DC-DC converters, motor drive stages, synchronous rectification, and load switching.

The forward voltage (Vf) for this model is 1 V, which is relevant for its operation in various circuits.

The country of origin for this model is India.

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