Infineon N-Channel MOSFET 381A Continuous Drain Current 40V Drain-Source Voltage 8-Pin TDSON BSC025N08LS5ATMA1

The Infineon BSC025N08LS5ATMA1 is a high-current N-Channel MOSFET designed for demanding thermal environments and surface-mount power switching applications. Featuring a maximum continuous drain current of 381 amperes and a drain-source voltage rating of 40 volts, this MOSFET is suitable for low-voltage, high-current use cases. It is housed in a reliable 8-pin TDSON package optimized for surface soldering onto PCB pads.

This device offers ultra-low on-resistance which minimizes conduction losses, facilitating efficient power management and thermal performance. With a maximum power dissipation of 81 watts, it supports elevated power handling, critical for applications with heavy current loads.

The gate charge is typically 80nC at the specified gate voltage, enabling faster switching transitions and improved efficiency in electronic circuits. The device operates effectively across a wide temperature span from -55°C up to +150°C, ensuring robustness in varied industrial and commercial environments.

The maximum allowable gate-source voltage is 20 volts to prevent overstress and potential damage to the gate structure. The forward voltage drop of approximately 1.2 volts contributes to junction heating under high current loads and must be considered in thermal management designs.

This semiconducting device is compliant with RoHS directives, limiting the use of hazardous substances and ensuring environmentally responsible manufacturing. Typical applications include high-current DC-DC converter designs, synchronous rectification in power supplies, motor control stages with a forward voltage consideration, and server power distribution modules. Its compact surface-mount form factor suits dense PCB layouts and power assembly modules.

Ultra-low on-resistance reduces conduction losses effectively. Supports high current loads with continuous drain current rating of 381 amperes. Compact TDSON surface-mount package enables efficient PCB assembly. Maximum power dissipation of 81 watts allows elevated power handling capacity.

Wide operating temperature range from -55°C to +150°C ensures reliable performance. Typical gate charge of 80nC facilitates faster switching transitions. Maximum gate-source voltage rating of 20 volts prevents gate overstress.

Typical forward voltage drop of 1.2 volts impacts thermal design considerations. Compliant with RoHS environmental standards restricting hazardous substances. Explore more Infineon MOSFETs and related discrete semiconductor devices at EnvMart for your industrial, laboratory, and commercial power management solutions.