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Infineon N-Channel MOSFET 212 A 40 V TSDSON-8 FL BSZ0500NSIATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSZ0500NSIATMA1 |
| Mount Type | Surface |
| Series | BSZ |
| Maximum Operating Temperature | 175°C |
| Package Type | TSDSON-8 FL |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 212A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Optimized for high performance buck converters.
- Surface mount TSDSON-8 FL package with 8 pins.
- Very low on-resistance of 0.7 milliohms for efficient power management.
- Typical gate charge of 80 nC at Vgs ensures fast switching.
- Maximum power dissipation capability of 81 W for reliability under load.
- Wide operating temperature range from -55°C to 175°C for industrial applications.
- Monolithically integrated Schottky-like diode for reduced switching losses.
- Compliance with RoHS standards for environmental safety.
Product Description
Infineon BSZ0500NSIATMA1 is a high-performance N-Channel MOSFET designed for power management in electronic circuits. Featuring a maximum continuous drain current of 212 A and a drain-source voltage of 40 V, this MOSFET is housed in a compact TSDSON-8 FL surface mount package with 8 pins, ensuring efficient PCB integration.
The device incorporates a monolithically integrated Schottky-like diode, providing very low on-resistance of 0.7 milliohms and typical gate charge of 80 nC at Vgs which enables rapid switching. Its maximum power dissipation rating of 81 W ensures reliable operation under heavy load conditions, suitable for industrial and automotive electronics.
Operating over a broad temperature range from -55°C to 175°C, this MOSFET is suitable for demanding environmental conditions. Compliance with RoHS regulations affirms its environmentally friendly manufacturing process. The maximum gate-source voltage of 20 V and a low forward voltage of 1 V improve the device's efficiency and durability in power electronics.
This product is ideal for use in buck converters, motor control, power supplies, and other industrial, commercial, and automotive applications requiring robust and efficient N-Channel MOSFET components.
Optimized for high performance buck converters. Surface mount TSDSON-8 FL package with 8 pins. Very low on-resistance of 0.7 milliohms for efficient power management. Typical gate charge of 80 nC at Vgs ensures fast switching.
Maximum power dissipation capability of 81 W for reliability under load. Wide operating temperature range from -55°C to 175°C for industrial applications. Monolithically integrated Schottky-like diode for reduced switching losses.
Compliance with RoHS standards for environmental safety. Maximum gate-source voltage rating of 20 V supports robustness. Forward voltage of 1 V enhances energy efficiency in switching circuits. Explore advanced semiconductor and MOSFET solutions with Infineon at EnvMart for your industrial and electronics needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 212 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
It has a maximum power dissipation capability of 81 W.
The on-resistance is very low at 0.7 milliohms, which aids in efficient power management.
The typical gate charge at Vgs is 80 nC.
It operates over a wide temperature range from -55°C to 175°C.
This model is housed in a TSDSON-8 FL surface mount package with 8 pins.
The maximum gate-source voltage rating is 20 V.
Yes, it complies with RoHS standards for environmental safety.
This MOSFET is suitable for applications such as buck converters, motor control, and power supplies.
The forward voltage of this MOSFET is 1 V.
The country of origin for this model is India.
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