Infineon N-Channel MOSFET 381 A, 40 V, 8-Pin TDSON Package BSC007N04LS6ATMA1

Infineon BSC007N04LS6ATMA1 N-Channel MOSFET is a high-current transistor designed for surface-mount power switching and conversion tasks. Offering a maximum continuous drain current of 381 A and a maximum drain-source voltage of 40 V, this component operates efficiently in industrial, automotive, and power supply applications.

This MOSFET's low on-resistance of 0.7 mΩ minimizes conduction losses, facilitating energy-efficient operation in demanding power stages. Packaged in an 8-pin TDSON surface-mount device, it supports compact and thermally efficient designs with a maximum power dissipation of 1.6 W.

The gate charge of 80 nC at the gate-source voltage enables rapid switching with controlled gate driver selection, limited by a 20 V maximum gate-source voltage to ensure device safety. Its broad operating temperature range from -55 °C to 175 °C allows deployment across harsh environmental conditions.

Ideal for high-current direct current to direct current (DC-DC) converters, motor driver circuits requiring low forward voltage, and battery management systems, the BSC007N04LS6ATMA1 excels in power-switching roles within industrial equipment and compact power modules. Surface-mount technology (SMT) placement with optimized copper PCB layouts reduces parasitic inductances and improves thermal management.

Low drain-source resistance of 0.7 mΩ reduces power losses. High current capacity supports heavy load requirements. Compact, surface-mount 8-pin TDSON package for space-saving designs. Robust operation over wide temperature ranges.

Controlled gate charge enables reliable switching performance. Compatible with automotive and industrial power systems.

Choose Infineon's BSC007N04LS6ATMA1 for reliable, efficient power handling in demanding electronic and electrical applications. Explore further components within discrete semiconductors at EnvMart for comprehensive solutions.