Infineon BSZ N-Channel MOSFET, 212 A, 40 V, 8-Pin TSDSON-8 FL, Surface Mount BSZ010NE2LS5ATMA1

The Infineon BSZ010NE2LS5ATMA1 is a high-performance N-Channel MOSFET optimized for demanding electronic applications requiring efficient switching and power management.

This MOSFET features a continuous drain current capability of 212 A and a maximum drain-source voltage of 40 V, making it ideal for robust power MOSFET applications. The device is housed in a compact 8-pin TSDSON-8 FL package configured for surface mount technology, allowing for effective PCB integration.

Designed with a very low on-resistance of 0.7 milliohms, the transistor reduces power losses and improves overall circuit efficiency. The maximum power dissipation of 81 W supports operation at high loads without compromising reliability.

Operating temperatures range from -55°C to 175°C, ensuring the MOSFET performs well in harsh thermal environments. It has a maximum gate-source voltage rating of 20 V and a typical gate charge of 80 nC, facilitating quick switching and reduced switching losses suitable for high-frequency power converters.

This product complies with RoHS environmental standards and is halogen-free according to IEC61249-2-21, supporting eco-friendly electronics design.

The BSZ010NE2LS5ATMA1 is particularly well suited for high performance buck converters and power switching circuits requiring high current capacity and superior thermal resistance. It delivers efficient power conversion in industrial, automotive, and consumer electronic applications.

Engineers can rely on this MOSFET for enhanced thermal management, low conduction losses, and durable performance under demanding operational conditions. Its compact footprint and surface mount design simplify integration into complex layouts.

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