Infineon BSC N-Channel MOSFET 381A 40V 8-Pin TDSON Surface Mount BSC070N10LS5ATMA1

The Infineon BSC070N10LS5ATMA1 is a high-performance N-Channel MOSFET designed to handle extremely high currents of up to 381 amperes with a maximum drain-source voltage of 40 volts. Housed in an 8-pin TDSON surface mount package, it is optimized for power conversion and switching tasks in demanding industrial, electronic, and power management applications. This device offers exceptionally low conduction loss thanks to its very low Rds(on) of 0.7 milliohm, making it ideal for energy-efficient motor drives, power supplies, and synchronous rectification.

Operating over a wide temperature range from -55°C up to +150°C, the MOSFET ensures reliable performance in harsh environments including industrial controls, data center power rails, battery management systems, and high-power class-D audio output stages. Its typical gate charge of 80 nanocoulombs provides a balanced drive capability, enabling fast switching with reduced energy consumption while the forward voltage of 1.1 volts minimizes conduction drop and energy loss.

The component is RoHS compliant and meets environmental regulations, making it suitable for green manufacturing. The robust maximum gate-source voltage of 20 volts ensures safe and stable gate operation with adequate margin. Surface mount assembly with the compact 8-pin TDSON package supports space-saving PCB layouts often required in modern electronic equipment.

Common applications include high-current motor drive stages, power supply synchronous rectifiers, high discharge battery management, DC-DC conversion in servers, and high-power class-D audio amplifiers. This device is not specified for automotive-grade standards but suits many industrial and commercial scenarios requiring substantial current capability and thermal stability.

Maximum continuous drain current of 381A supports heavy-load switching tasks. Low Rds(on) of 0.7mΩ reduces power loss and increases efficiency. Maximum drain-source voltage rating of 40V ensures device safety under load.

Maximum power dissipation of 81W supports sustained high power operation. Wide operating temperature range from -55°C to +150°C for reliability in harsh conditions. Typical gate charge of 80nC balances drive energy and switching speed.

Forward voltage of 1.1V minimizes voltage drop during conduction. Maximum gate-source voltage of 20V allows robust and safe gate drive. 8-pin TDSON package for ease of surface mounting and compact design. Explore the full range of Infineon discrete semiconductors and MOSFETs on EnvMart for advanced industrial, electronics, and power management solutions.