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Infineon BSC0 Series N-Channel MOSFET 381 A Continuous Drain Current 40 V Drain Source Voltage 81 W Power BSC019N06NSATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC019N06NSATMA1 |
| Mount Type | Surface |
| Series | BSC0 |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON-8 FL |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Ultra-low on-resistance of 0.7 mΩ reduces conduction losses.
- Supports operation from -55 °C to 175 °C for demanding environments.
- Typical gate charge of 80 nC enables rapid switching.
- Maximum gate source voltage rating of 20 V ensures flexible gate drive control.
- Forward voltage of 1 V impacts conduction performance and thermal design.
- Designed for surface mount applications on PCBs using TDSON-8 FL package.
- Suitable for high-current synchronous rectification and power conversion in telecom and server equipment.
- Can be used in motor-drive half-bridges and H-bridge configurations.
Product Description
Infineon BSC019N06NSATMA1 is a high-current N-Channel MOSFET designed for surface-mount power applications requiring low on-resistance and fast switching performance. With a maximum continuous drain current of 381 A and a maximum drain source voltage of 40 V, this device provides robust power handling in mid-voltage power rails and converters.
This MOSFET is housed in a compact TDSON-8 FL package suitable for PCB surface mounting, enabling efficient thermal management and board-level integration. It operates reliably over a wide temperature range from -55 °C to 175 °C, making it well suited for demanding industrial, commercial, and telecommunications environments.
Featuring an ultra-low Rds(on) of 0.7 mΩ, the device minimizes conduction losses and heat generation, ensuring high efficiency. The typical gate charge of 80 nC allows rapid switching, ideal for dynamic load applications, while the maximum gate source voltage of 20 V provides flexible gate-drive voltage options for control circuits.
The 1 V forward voltage influences conduction characteristics and thermal design considerations. This MOSFET series is optimized for applications such as high-current synchronous rectification stages, power conversion for servers and telecom equipment, motor-drive half-bridge and H-bridge topologies, battery management systems, and DC-DC converters. It is also suitable for high-power MOSFET arrays on compact power boards.
Ultra-low on-resistance enhances efficiency and reduces heat generation. Wide operating temperature range ensures reliability in harsh environments. Rapid switching enabled by low gate charge. Flexible gate drive voltages with 20 V gate source rating.
Compact surface-mount TDSON-8 FL package for easy PCB integration. High continuous drain current supports demanding power applications. Broad application in power conversion, motor drives, and battery management.
This Infineon MOSFET is certified RoHS compliant, reflecting adherence to environmental standards. Ideal for use in industrial, laboratory, construction, telecommunications, and power electronics sectors.
Explore more quality semiconductor and MOSFET products by Infineon on EnvMart to meet your industrial and electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 381 A.
It has a maximum drain source voltage rating of 40 V.
The ultra-low on-resistance is 0.7 mΩ, which helps reduce conduction losses.
This MOSFET operates reliably within a temperature range of -55 °C to 175 °C.
The typical gate charge is 80 nC, enabling rapid switching performance.
The maximum gate source voltage rating is 20 V, providing flexibility in gate drive control.
It is housed in a compact TDSON-8 FL package suitable for surface mounting on PCBs.
This model is suitable for high-current synchronous rectification, power conversion in telecom and server equipment, and motor-drive applications.
The forward voltage is 1 V, which impacts conduction performance and thermal design.
The maximum power dissipation for this MOSFET is 81 W.
Yes, this MOSFET is certified RoHS compliant, adhering to environmental standards.
This model features an 8-pin configuration.
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