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Infineon BSC0 N-Channel MOSFET, 381 A Max Continuous Drain Current, 40 V Drain-Source Voltage, 8-Pin BSC019N06NSATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC019N06NSATMA1 |
| Mount Type | Surface |
| Series | BSC0 |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON-8 FL |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Features ultra-low Rds(on) of 0.7 mΩ reducing conduction losses and heat generation.
- Supports a maximum power dissipation of 81 W for robust power handling.
- Typical gate charge of 80 nC enables rapid switching performance.
- Wide operating temperature range from -55°C to 175°C for demanding environments.
- Supplied in compact TDSON-8 FL surface-mount package with 8 pins.
- Maximum gate-source voltage of 20 V allows flexible gate-drive voltages.
- Forward voltage of 1 V influences conduction losses and thermal design.
- Complies with RoHS standards ensuring environmentally friendly manufacturing.
Product Description
Infineon BSC019N06NSATMA1 is a N-Channel MOSFET from the BSC0 series, engineered for high-current switching applications with a maximum continuous drain current of 381 A and a drain-source voltage rating of 40 V. This device features an ultra-low drain-source resistance of 0.7 mΩ which reduces conduction losses and limits heat generation, making it suitable for high-efficiency power circuits.
Designed for surface-mount on PCBs, the MOSFET is housed in a compact TDSON-8 FL package with 8 pins, facilitating easy integration into modern electronic designs. It supports a maximum power dissipation of 81 W, ensuring it can handle substantial power levels without immediate thermal runaway.
The device operates reliably over a wide temperature range from -55°C to 175°C, making it ideal for demanding industrial, telecommunications, and server power conversion applications. Its typical gate charge of 80 nC offers fast switching capabilities suitable for dynamic load conditions, while the maximum gate-source voltage of 20 V provides flexibility in gate drive design.
The forward voltage of 1 V should be considered in conduction loss calculations to optimize thermal management. This MOSFET complies with RoHS standards, confirming its compliance with environmental regulations.
Key applications include high-current synchronous rectification stages, motor drive half-bridges and H-bridge configurations, battery management, and DC-DC converters. It is also well-suited for use in high-power MOSFET arrays on compact power boards commonly found in industrial and commercial electronics.
Ultra-low Rds(on) 0.7 mΩ reduces conduction losses and heat. Maximum continuous current rating of 381 A supports high power. 40 V drain-source voltage for mid-voltage systems. Compact TDSON-8 FL package for surface mounting.
Operating temperature range from -55°C to 175°C ensures durability. Maximum power dissipation rating at 81 W. Typical gate charge of 80 nC for fast switching. Maximum gate-source voltage rating of 20 V. RoHS compliant for eco-friendly production.
Suitable for power conversion, motor drive, and battery management applications. Explore the Electronics & Electricals category at EnvMart to discover more high-performance semiconductor devices and components from Infineon and other leading manufacturers.
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Frequently Asked Questions
The maximum continuous drain current for this model is 381 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
The ultra-low Rds(on) for this model is 0.7 mΩ, which helps reduce conduction losses and heat generation.
The typical gate charge for this MOSFET is 80 nC, enabling rapid switching performance.
It operates reliably over a wide temperature range from -55°C to 175°C.
The maximum power dissipation rating for this device is 81 W.
This model is housed in a compact TDSON-8 FL surface-mount package with 8 pins.
The maximum gate-source voltage rating is 20 V, allowing for flexible gate-drive voltages.
It is suitable for high-current synchronous rectification stages, motor drive half-bridges, battery management, and DC-DC converters.
The device complies with RoHS standards, ensuring environmentally friendly manufacturing.
The forward voltage for this model is 1 V, which should be considered in conduction loss calculations.
This device features an N-channel configuration, which is common for high-current switching applications.
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