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Infineon BSZ Series N-Channel MOSFET, 212 A Continuous Drain Current, 40 V Drain-Source Voltage, 81 W BSZ075N08NS5ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model BSZ075N08NS5ATMA1
Mount Type Surface
Series BSZ
Maximum Operating Temperature +150°C
Package Type SuperSO8 5 x 6
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 212A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 0.7mΩ
Channel Mode N
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • This MOSFET offers very low on-resistance of 0.7mΩ to reduce conduction losses.
  • Maximum power dissipation of 81 W enables handling significant thermal loads.
  • Typical gate charge of 80nC supports efficient gate-drive design.
  • Wide operating temperature range from -55°C to +150°C supports harsh environments.
  • Surface-mount SuperSO8 package ensures compact PCB footprint and thermal management.
  • Maximum gate-source voltage tolerance of 20 V allows flexible driving voltages.
  • Forward voltage drop of 1.2 V enhances switching efficiency.
  • Compliant with RoHS standards for environmentally safe assembly.

Product Description

Infineon BSZ075N08NS5ATMA1 is a high-current N-Channel MOSFET featuring a maximum continuous drain current of 212 A and a drain-source voltage rating of 40 V. It is housed in a compact 8-Pin SuperSO8 5 x 6 surface-mount package designed for optimal PCB layout and thermal performance.

This MOSFET provides very low on-resistance of only 0.7mΩ, significantly reducing conduction losses in demanding power applications. It supports a maximum power dissipation of 81 W, enabling efficient operation under high thermal loads.

The device exhibits a typical gate charge of 80 nC, which facilitates efficient switching and gate drive energy management. Its maximum gate-source voltage tolerance of 20 V provides flexibility in gate drive voltage selection.

Operating over a wide temperature range from -55°C to +150°C, this MOSFET is suited for industrial and commercial environments requiring robust performance. The forward voltage drop of 1.2 V contributes to improved switching efficiency.

The product meets RoHS compliance standards, ensuring it is free from certain hazardous substances. Its surface-mount SuperSO8 5 x 6 package requires careful thermal and footprint design considerations to maximize performance.

Very low on-resistance reduces conduction losses for heavy loads. High maximum continuous drain current supports substantial current flow. Moderate 40 V drain-source rating for versatile power stage applications. Robust 81 W power dissipation supports thermal loading requirements.

Typical gate charge balances gate-drive efficiency and switching speeds. Wide operating temperature range enables use in extreme conditions. RoHS compliant for environmentally responsible manufacturing. Compact surface-mount package saves PCB space and eases assembly.

Suitable for DC-DC converters, motor drive half-bridge legs, synchronous rectification, and battery management systems.

This MOSFET is ideal for use in Industrial, Electronics Manufacturing, Power Supply Design, and Automotive Electronics applications. Explore more categories and products from Infineon and additional MOSFET types to meet diverse electronic component needs at EnvMart.

Infineon BSZ Series N-Channel MOSFET, 212 A Continuous Drain Current, 40 V Drain-Source Voltage, 81 W BSZ075N08NS5ATMA1
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Frequently Asked Questions

The maximum continuous drain current of this model is 212 A.

It has a maximum drain-source voltage rating of 40 V.

The typical gate charge is 80 nC, which aids in efficient gate drive design.

This MOSFET features a very low on-resistance of 0.7 mΩ, reducing conduction losses.

The maximum power dissipation is 81 W, allowing it to handle significant thermal loads.

It operates over a wide temperature range from -55°C to +150°C.

It is housed in a SuperSO8 5 x 6 surface-mount package.

The maximum gate-source voltage tolerance is 20 V, providing flexibility in gate drive voltage selection.

This model is suitable for applications such as DC-DC converters, motor drive half-bridge legs, synchronous rectification, and battery management systems.

Yes, this MOSFET meets RoHS compliance standards, ensuring it is free from certain hazardous substances.

The forward voltage drop is 1.2 V, which enhances switching efficiency.

This model has a pin count of 8.

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