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Infineon N-Channel MOSFET 381A 40V 8-Pin SuperSO8 5x6 Surface Mount BSC026NE2LS5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC026NE2LS5ATMA1 |
| Mount Type | Surface |
| Series | BSC0 |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Supports surface mount technology with compact 5 x 6 mm SuperSO8 package.
- Offers low maximum drain-source resistance of 0.7 mΩ for efficient power handling.
- Maximum power dissipation rated at 81 W for high thermal performance.
- Operates in a wide temperature range from -55°C to 175°C for reliability.
- Maximum gate-source voltage of 20 V ensures robust gate control.
- Typical gate charge at gate-source voltage 80 nC balances switching speed and efficiency.
- Forward voltage of 1 V supports effective conduction in circuits.
- Manufactured compliant with RoHS standards ensuring environmental safety.
Product Description
Infineon BSC026NE2LS5ATMA1 is a high-performance N-channel MOSFET designed for demanding electronic applications requiring high current capacity and efficient switching.
This MOSFET provides a maximum continuous drain current of 381 A and supports a drain-source voltage up to 40 V, making it suitable for high power density applications such as voltage regulators, DC-DC converters, and power supplies.
The 8-pin SuperSO8 (5 x 6 mm) surface mount package promotes compact PCB designs and superior thermal management. Its extremely low on-resistance at 0.7 mΩ reduces power losses, enhancing energy efficiency both in standby and full operation modes.
Designed for harsh industrial conditions, it supports operating temperatures from -55°C to 175°C and withstands gate-source voltages of up to 20 V. Typical gate charge of 80 nC enables fast switching performance balancing speed versus power dissipation.
This device is RoHS compliant and free of halogens, aligning with modern environmental standards and regulations. The MOSFET is ideal for applications in industrial controls, power supplies, automotive electronics, and high-performance computing hardware such as servers and desktops.
Supports surface mount technology with compact 5 x 6 mm SuperSO8 package. Offers low maximum drain-source resistance of 0.7 mΩ for efficient power handling. Maximum power dissipation rated at 81 W for high thermal performance.
Operates in a wide temperature range from -55°C to 175°C for reliability. Maximum gate-source voltage of 20 V ensures robust gate control. Typical gate charge at gate-source voltage 80 nC balances switching speed and efficiency.
Forward voltage of 1 V supports effective conduction in circuits. Manufactured compliant with RoHS standards ensuring environmental safety. Qualified for surface mount applications in power electronics and industrial use cases.
Applications include industrial manufacturing, laboratory instrumentation, power management systems, and advanced electronic equipment. This product is a reliable choice for engineers seeking to optimize power efficiency and device longevity in designing power electronics solutions.
Browse the Infineon brand and MOSFET category on EnvMart for more semiconductor devices suited for varied industrial and commercial needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 381 A, making it suitable for high power density applications.
This MOSFET supports a maximum drain-source voltage of 40 V, allowing it to be used in various power applications.
It comes in a SuperSO8 5 x 6 mm surface mount package, which facilitates compact PCB designs.
The maximum power dissipation for this MOSFET is rated at 81 W, which supports high thermal performance.
It operates within a wide temperature range from -55°C to 175°C, ensuring reliability in harsh conditions.
The maximum gate-source voltage is 20 V, which ensures robust gate control during operation.
The typical gate charge at gate-source voltage is 80 nC, balancing switching speed and efficiency.
It features a low maximum drain-source resistance of 0.7 mΩ, enhancing energy efficiency in applications.
This device is manufactured compliant with RoHS standards, ensuring environmental safety.
It is ideal for applications in industrial controls, power supplies, automotive electronics, and high-performance computing hardware.
This model has 8 pins, which is typical for its SuperSO8 package design.
The country of origin for this MOSFET is India.
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