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Infineon IPL N-Channel MOSFET 4.5 A 800 V 5-Pin ThinPAK 5x6 IPLK80R2K0P7ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 6.42mm |
| Model | IPLK80R2K0P7ATMA1 |
| Mount Type | Surface |
| Series | IPL |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK 5x6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.5A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 1.2mΩ |
| Maximum Power Dissipation Pd | 43W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 3V |
| Forward Voltage Vf | 900mV |
Key Features
- Optimized for flyback applications such as adapters, chargers, audio SMPS, AUX, and industrial power supplies.
- Provides up to 0.6% efficiency gain and reduces MOSFET temperature by 2°C to 8°C compared to predecessors.
- Enables higher power density designs through lower switching losses and improved DPAK RDS(on) performance.
- Features best-in-class Figure of Merit (FOM) for RDS(on) and Eoss, with reduced gate charge and capacitances.
- Includes integrated Zener diode ESD protection for enhanced reliability.
- Comes in a compact ThinPAK 5x6 package with a height of 1 mm, enabling smaller form factors.
- Complies with RoHS and AEC-Q101 automotive standards ensuring quality and safety.
Product Description
Infineon IPLK80R2K0P7ATMA1 is a high-performance N-Channel MOSFET designed for surface mount applications requiring up to 4.5 amperes continuous drain current and blocking voltage of 800 volts.
This device is primarily targeted at flyback converter applications including adapters, chargers, audio SMPS units, AUX power supplies, and industrial power circuits. It delivers superior efficiency benefits with up to 0.6% improvement and lowers operating temperature between 2 to 8 degrees Celsius compared to previous models and market competitors. These advantages facilitate designing higher power density power supplies with reduced switching losses.
The MOSFET features best-in-class parameters such as very low drain-source resistance (RDS(on)) at 1.2 mΩ, minimal gate charge (Qg) of 80 nC, and low forward voltage drop of 900 mV, all contributing to high operational efficiency and reliability. It also offers a stable gate threshold voltage of 3 V with minimal variation, ensuring consistent performance.
The ThinPAK 5x6 package, measuring approximately 5x6 mm with just 1 mm height, is ideal for compact PCB layouts while reducing parasitic inductances and thermal resistance, thereby increasing power density in electronic designs.
The device meets RoHS environmental compliance and AEC-Q101 industry standards for automotive quality, ready for use in demanding industrial, automotive, and consumer power electronics applications.
Optimized for flyback converters in power adapters, chargers, audio SMPS, AUX, and industrial power supply designs. High power density enabled through low switching losses and advanced package technology. Integrated Zener diode provides robust ESD protection.
Excellent thermal performance with lowered MOSFET temperature during operation. Compact ThinPAK 5x6 surface mount package allows space-saving designs. Compliant with stringent automotive and environmental standards for reliability.
Infineon offers this IPL series MOSFET as a reliable and efficient semiconductor solution, suitable for industrial manufacturing, consumer electronics, automotive power management, and various commercial electronic equipment. Explore EnvMart for more Infineon power semiconductor devices and related electronic components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.5 A.
It can handle a maximum drain-source voltage of 800 V.
This model comes in a ThinPAK 5x6 package.
The operating temperature range is from -55°C to 150°C.
The maximum drain-source resistance (RDS(on)) is 1.2 mΩ.
The typical gate charge (Qg) is 80 nC.
Yes, it includes an integrated Zener diode for ESD protection.
It complies with the AEC-Q101 automotive standard.
The forward voltage drop (Vf) is 900 mV.
The height of the ThinPAK 5x6 package is 1 mm.
It complies with RoHS environmental standards.
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