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Infineon IQE N-Channel MOSFET 253 A, 30 V, 8-Pin PQFN Surface Mount IQE008N03LM5CGATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 3.3mm |
| Model | IQE008N03LM5CGATMA1 |
| Mount Type | Surface |
| Series | IQE |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 253A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.85mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 730mV |
Key Features
- This MOSFET features a low RDS(on) of 0.85 mΩ for high efficiency power switching.
- It supports a maximum power dissipation of 81 W ensuring robust thermal handling.
- The device operates over a temperature range from -55°C to 150°C for reliability in harsh environments.
- Typical gate charge is 80 nC at Vgs, optimizing switching performance.
- Designed in a compact 3.3 mm length PQFN package for dense PCB layouts.
- Forward voltage is 730 mV, providing efficient conduction characteristics.
- Meets RoHS compliance and automotive standard AEC-Q101 for quality assurance.
- Surface mount design simplifies integration in electronic power applications.
Product Description
Infineon IQE008N03LM5CGATMA1 is a high-performance N-Channel MOSFET designed for demanding power electronics applications. Featuring a maximum continuous drain current of 253 A and a drain-source voltage rating of 30 V, this device is optimized for efficient power switching and thermal management in surface mount configurations. The MOSFET's 8-pin PQFN package measures 3.3 mm in length, offering a compact footprint suitable for modern electronic designs.
With a low on-resistance RDS(on) of 0.85 mΩ, the MOSFET ensures minimal power losses and contributes to improved energy efficiency in circuits. The typical gate charge of 80 nC at gate voltage enhances switching speed, making it ideal for applications requiring fast switching frequencies. Additionally, the device supports a maximum power dissipation of 81 W, facilitating robust operation under high power loads.
The operating temperature range from -55°C to 150°C and adherence to automotive standard AEC-Q101 and RoHS compliance deliver reliability and environmental safety, making the IQE008N03LM5CGATMA1 suitable for automotive and industrial uses. Its surface mount package type allows for straightforward PCB assembly and compact system layouts.
High continuous drain current capacity of 253 A. Low on-state resistance of 0.85 mΩ for efficient conduction. Compact 8-pin PQFN package with 3.3 mm length footprint. Maximum power dissipation rating of 81 W for thermal robustness.
Wide operating temperature range from -55°C to 150°C. Typical gate charge of 80 nC ensuring responsive switching. Compliance with RoHS and automotive AEC-Q101 standards. Surface mount device facilitating modern PCB design.
This MOSFET is well-suited for industrial, automotive, power management, and electronic control applications requiring efficient switching and thermal performance. Explore a wide range of Infineon power semiconductor products for robust and reliable solutions on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 253 A.
It has a drain-source voltage rating of 30 V.
The on-resistance (RDS(on)) is 0.85 mΩ, ensuring efficient conduction.
The typical gate charge at Vgs is 80 nC, which enhances switching performance.
The maximum power dissipation rating is 81 W, allowing for robust thermal management.
This model comes in an 8-pin PQFN package with a length of 3.3 mm.
Yes, it meets RoHS compliance and automotive standard AEC-Q101 for quality assurance.
It features a surface mount design, simplifying integration into electronic applications.
It is suitable for industrial, automotive, power management, and electronic control applications requiring efficient switching.
The forward voltage is 730 mV, contributing to its efficient conduction characteristics.
The maximum gate-source voltage (Vgs) is 16 V.
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