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Nexperia N-Channel MOSFET, 10.3 A Continuous Drain Current, 30 V Drain Source Voltage, 4-Pin LFPAK56E Package PSMN1R5-50YLHX
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PSMN1R5-50YLHX |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | LFPAK56E |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Maximum Power Dissipation Pd | 12.5W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Designed for surface mount applications with a low-inductance LFPAK56E package.
- Maximum continuous drain current of 10.3 A ensures robust power handling.
- Rated for drain-source voltage up to 30 V for versatile usage.
- Low on-resistance of 13.6 milliohms reduces power loss and heat generation.
- Maximum power dissipation rating of 12.5 W supports reliable operation.
- Wide operating temperature range from -55 °C to 150 °C for demanding environments.
- Gate-source voltage rating up to 20 V to facilitate logic level driving.
- Soft body-diode recovery enables low EMI designs with fast switching capabilities.
Product Description
Nexperia PSMN1R5-50YLHX N-Channel MOSFET offers excellent electrical performance in a 4-pin LFPAK56E surface mount package. It delivers a maximum continuous drain current of 10.3 A and is rated for drain-source voltages up to 30 V. This power MOSFET is optimized for applications requiring efficient linear mode operation, especially for 36 V battery-powered systems.
The device features a low drain-source on-resistance of 13.6 milliohms and a maximum power dissipation of 12.5 W, enabling low conduction losses and improved thermal performance. Its operating temperature range spans from -55 °C to 150 °C, making it suitable for industrial, automotive, and commercial electronics environments where durability is critical.
This MOSFET includes a gate-source voltage tolerance of ±20 V and a low gate charge (QG) for minimized switching losses, supporting high-frequency switching applications with soft body-diode recovery characteristics for reduced electromagnetic interference (EMI). The LFPAK56E package offers low package inductance and allows easy solder-joint inspection and mounting.
Typical applications include power management in battery supplies, DC-DC converters, industrial motor drives, and general-purpose switching circuits in electronics manufacturing. The device’s avalanche robustness and stringent production testing assure reliable performance under pulse power conditions.
This Nexperia MOSFET is well suited for use in industrial, automotive, laboratory, and construction electrical systems requiring reliable discrete semiconductor components. Designed for surface mount applications with a low-inductance LFPAK56E package.
Maximum continuous drain current of 10.3 A ensures robust power handling. Rated for drain-source voltage up to 30 V for versatile usage. Low on-resistance of 13.6 milliohms reduces power loss and heat generation. Maximum power dissipation rating of 12.5 W supports reliable operation.
Wide operating temperature range from -55 °C to 150 °C for demanding environments. Gate-source voltage rating up to 20 V to facilitate logic level driving. Soft body-diode recovery enables low EMI designs with fast switching capabilities.
Ideal for battery-powered applications requiring high avalanche capability and efficiency. Thoroughly tested to meet strict quality and reliability standards. Explore more in the Electronics & Electricals category at EnvMart for high-quality discrete semiconductor components and MOSFET solutions.
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Frequently Asked Questions
The maximum continuous drain current of this model is 10.3 A.
It is rated for a maximum drain-source voltage of 30 V.
The low on-resistance of this unit is 13.6 milliohms, which helps reduce power loss and heat generation.
The maximum power dissipation rating is 12.5 W, supporting reliable operation.
This MOSFET operates within a temperature range of -55 °C to 150 °C.
It uses a 4-pin LFPAK56E surface mount package.
The gate-source voltage rating is ±20 V, allowing for logic level driving.
Typical applications include power management in battery supplies, DC-DC converters, and industrial motor drives.
The soft body-diode recovery enables low EMI designs with fast switching capabilities.
This model has a pin count of 4.
The country of origin for this MOSFET is India.
It features an N-channel type, which is suitable for various applications.
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