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Nexperia N-Channel Enhancement Mode MOSFET, 10.3 A Continuous Drain Current, 30 V Drain Source Voltage, 8-Pin PXN010-30QLJ

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Nexperia N-Channel Enhancement Mode MOSFET, 10.3 A Continuous Drain Current, 30 V Drain Source Voltage, 8-Pin PXN010-30QLJ

Name: Nexperia N-Channel Enhancement Mode MOSFET, 10.3 A Continuous Drain Current, 30 V Drain Source Voltage, 8-Pin PXN010-30QLJ
Brand: Nexperia
SKU: 296793
Price: 0.34 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Model	PXN010-30QLJ
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	MLPAK33
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	10.3A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	13.6mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	12.5W
Maximum Gate Source Voltage Vgs	20V

Key Features

Features trench MOSFET technology for improved efficiency at high switching frequencies.
Offers ultra low gate charges QG and QGD ensuring high system efficiency.
Designed with fast switching and soft recovery to minimize EMI.
Compact MLPAK33 package with a 3.3 x 3.3 mm footprint for surface mount applications.
Operates within a temperature range from -55°C to 150°C for reliable performance.
Maximum power dissipation rating of 12.5 W supports moderate power applications.
Maximum gate-source voltage rating of 20 V to suit typical gate drive circuits.
Maximum continuous drain current rating of 10.3 A allows for robust current handling.

Product Description

The Nexperia PXN010-30QLJ is an N-channel enhancement mode MOSFET designed for efficient switching and power applications. Featuring trench MOSFET technology in a compact 8-pin MLPAK33 (3.3 x 3.3 mm) surface-mount package, this device provides ultra-low gate charge values (QG and QGD) to improve system efficiency, especially at high switching frequencies.

Its fast switching capability combined with soft recovery reduces electrical noise and electromagnetic interference (EMI), crucial for sensitive industrial, commercial, and electronic circuit designs. The device operates reliably within a broad temperature range of -55°C to 150°C, making it suitable for demanding environments.

Rated for a maximum continuous drain current of 10.3 A and a maximum drain-source voltage of 30 V, the PXN010-30QLJ MOSFET can handle significant load currents and voltages commonly found in power management, motor control, and DC-DC converter applications.

With a maximum power dissipation of 12.5 W and gate-source voltage of 20 V, this MOSFET is optimized for surface-mount PCB assembly and compact electronic designs. The device’s 8-pin MLPAK33 package ensures easy integration with modern manufacturing processes.

Features trench MOSFET technology for improved efficiency at high switching frequencies. Offers ultra low gate charges QG and QGD ensuring high system efficiency. Designed with fast switching and soft recovery to minimize EMI.

Compact MLPAK33 package with a 3.3 x 3.3 mm footprint for surface mount applications. Operates within a temperature range from -55°C to 150°C for reliable performance. Maximum power dissipation rating of 12.5 W supports moderate power applications.

Maximum gate-source voltage rating of 20 V to suit typical gate drive circuits. Maximum continuous drain current rating of 10.3 A allows for robust current handling. Surface mount device with 8 pins facilitating easy PCB assembly.

This Nexperia MOSFET is suited for industrial electronics, power management in consumer and commercial products, automotive electronics (non-automotive standard), and manufacturing automation where efficient power switching is required.

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