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Nexperia 2 N-Channel MOSFET, 98 A, 40 V, 8-Pin LFPAK56D BUK7V4R2-40HX
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | BUK7V4R2-40HX |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK56D |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 98A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 4.2mΩ |
| Maximum Power Dissipation Pd | 85W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Features a compact 8-pin LFPAK56D surface mount package designed for half-bridge configurations.
- Manufactured using advanced Trench 9 MOSFET technology for high efficiency and superior avalanche performance.
- Supports high power dissipation of up to 85 W and operates within temperature ranges from -55°C to 175°C.
- Offers low maximum drain-source resistance of 4.2 milliohms to minimize conduction losses.
- Complies with RoHS standards and is qualified to AEC-Q101 automotive grade specifications.
- Designed to reduce PCB layout complexity and supports PCB shrinkage for 3-phase motor drives.
- Optimized package lowers parasitic inductance enhancing system efficiency.
- Suitable for industrial and automotive power applications requiring higher power density.
Product Description
Nexperia BUK7V4R2-40HX is a dual element 2 N-Channel MOSFET housed in an 8-pin LFPAK56D surface mount package, with a maximum continuous drain current of 98 A and a maximum drain-source voltage of 40 V. This device is built using the advanced Trench 9 MOSFET technology which ensures low power losses and high power density.
The MOSFET supports a maximum power dissipation of 85 W, making it suitable for demanding industrial and automotive power control applications. Operating temperatures range from -55°C to 175°C, allowing usage in harsh environmental conditions. The device features a low maximum drain-source resistance (Rds) of 4.2 milliohms which helps reduce conduction losses and improve overall efficiency.
Its LFPAK56D package with a half-bridge configuration enables a reduced PCB footprint and layout complexity, specifically beneficial for compact 3-phase motor drives. The optimized package design lowers parasitic inductance which supports enhanced system-level thermal resistance (Rth(j-amb)) and higher efficiency.
The device is AEC-Q101 qualified, meeting automotive reliability standards, and RoHS compliant to meet environmental norms. Typical applications include automotive motor drives, power conversion systems, and industrial power management solutions.
Compact 8-pin LFPAK56D surface mount package designed for efficient half-bridge configurations. Trench 9 MOS technology ensures superior avalanche performance and low power losses. Qualified to AEC-Q101 automotive standards and RoHS compliant.
Designed for industrial and automotive applications requiring up to 98 A continuous drain current. Wide operating temperature range from -55°C to 175°C enhances versatility in harsh conditions. Optimized package reduces parasitic inductance and improves PCB layout efficiency.
Supports up to 85 W power dissipation for high power density applications. Low on-resistance of 4.2 mΩ minimizes conduction losses and increases efficiency. Explore more electronic components and MOSFETs with proven quality and performance at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 98 A.
This MOSFET has a maximum drain-source voltage of 40 V.
It supports a maximum power dissipation of 85 W.
The operating temperature range is from -55°C to 175°C.
It is housed in an 8-pin LFPAK56D surface mount package.
The maximum gate-source voltage is 20 V.
The maximum drain-source resistance is 4.2 milliohms.
Yes, it is RoHS compliant.
It is qualified to AEC-Q101 automotive grade specifications.
This model features 2 elements per chip.
It is suitable for automotive motor drives, power conversion systems, and industrial power management solutions.
The LFPAK56D package design reduces parasitic inductance and enhances PCB layout efficiency, making it beneficial for compact applications like 3-phase motor drives.
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