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STMicroelectronics Power MOSFET STW75N65DM6-4 N-Channel 30 V 55 A TO-247 4-Pin Enhancement Mode

Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 5.1mm
Length 40.92mm
Model STW75N65DM6-4
Width 15.8mm
Mount Type Through Hole
Series STW
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -55°C
Standards/Approvals UL
Pin Count 4
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 55A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 45mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 480W
Typical Gate Charge Qg @ Vgs 118nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.5V

Key Features

  • The device supports a maximum drain-source voltage of 30 V in a TO-247 4-pin package.
  • It features low gate charge and low RDS(on) resistance for optimized performance.
  • The MOSFET operates in enhancement mode and is suitable for through-hole mounting.
  • Maximum power dissipation is rated at 480 W, allowing high reliability under demanding conditions.
  • The high dv/dt ruggedness and Zener protection make it ideal for industrial and automotive applications.
  • Temperature range is from -55°C minimum to 150°C maximum operating temperature.
  • Typical gate charge at Vgs is 118 nC, enabling fast switching.
  • Complies with UL standards and automotive AEC-Q101 certification.

Product Description

STMicroelectronics STW75N65DM6-4 is a high-performance N-channel Power MOSFET in a durable TO-247 4-pin package designed for through-hole mounting. It supports a maximum continuous drain current of 55 A and a drain-source voltage rating of 30 V, making it suitable for demanding power applications.

This MOSFET is optimized for high-efficiency bridge topologies and zero voltage switching (ZVS) phase-shift converters, delivering extremely low RDS(on) resistance and reduced switching losses due to its low gate charge and input capacitance.

The device belongs to the MDmesh DM6 series, which incorporates fast recovery body diodes and exceptional avalanche ruggedness to ensure durability in industrial, automotive, and power management environments.

Operating temperature ranges from -55°C to 150°C, ensuring reliability across harsh conditions. The package dimensions are 15.8 mm width, 5.1 mm height, and 40.92 mm length. The MOSFET features low RDS(on) resistance at 45 mΩ, reducing conduction losses.

Typical gate charge at Vgs is 118 nC, enabling efficient switching performance. Maximum power dissipation rating of 480 W supports prolonged heavy loads. The device is Zener-protected and 100% avalanche tested for ruggedness against voltage spikes.

Compliance with UL and automotive AEC-Q101 standards guarantees quality and safety. Compatibility with various industrial applications including power electronics, motor drives, and energy management systems.

STMicroelectronics products are ideal for semiconductor discrete component needs in electronics manufacturing, industrial power conversion, and automotive sectors requiring robust and efficient power devices.

Explore the Electronics & Electricals section at EnvMart for a comprehensive range of Power MOSFETs and related semiconductor components.

STMicroelectronics Power MOSFET STW75N65DM6-4 N-Channel 30 V 55 A TO-247 4-Pin Enhancement Mode
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Frequently Asked Questions

The maximum continuous drain current for this model is 55 A.

It supports a maximum drain-source voltage of 30 V.

The package dimensions are 15.8 mm in width, 5.1 mm in height, and 40.92 mm in length.

The maximum drain-source resistance (RDS(on)) is rated at 45 mΩ.

The typical gate charge at Vgs is 118 nC.

The operating temperature range is from -55°C to 150°C.

It supports through-hole mounting.

The maximum power dissipation is rated at 480 W.

Yes, it complies with UL standards and is certified under automotive AEC-Q101.

It is suitable for industrial and automotive applications, including power electronics and motor drives.

This model features an N-channel configuration.

It belongs to the MDmesh DM6 series, which incorporates fast recovery body diodes.

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