STMicroelectronics STD N-Channel Power MOSFET, 55 A, 650 V, Enhancement Mode, 3-Pin TO-252 STD86N3LH5

The STMicroelectronics STD86N3LH5 is a high-performance N-Channel Power MOSFET designed with STripFET H5 technology for low on-state resistance and optimized switching efficiency. It supports a continuous drain current of 55 amperes and can withstand a maximum drain-source voltage of 650 volts, making it suitable for demanding power applications.

Constructed in a 3-pin TO-252 through-hole package, this MOSFET provides easy integration into various power electronic circuits. The device features a maximum drain-source resistance of 45 milliohms, enabling low conduction losses, and a maximum power dissipation rating of 70 watts for robust performance under heavy load conditions.

Engineered to operate reliably across a wide temperature range from -55°C to 175°C, the STD86N3LH5 is optimal for industrial, automotive, and commercial electronics where temperature endurance is critical. Its low gate charge of 14 nanocoulombs at 30 volts gate-source voltage ensures efficient switching with minimal gate drive losses.

Moreover, the MOSFET complies with AEC-Q101 automotive standards and has UL certifications, assuring high quality and safety compliance for automotive and industrial use. With compact dimensions (6.6 mm length x 6.2 mm width x 2.4 mm height), it enables space-efficient circuit design.

This N-Channel enhancement mode MOSFET is intended for use in power supply regulation, motor control, automotive electronics, inverter circuits, and various power management systems where high current and voltage capabilities are necessary.

This MOSFET operates in enhancement mode offering excellent switching performance. It features a TO-252 package with a 3-pin through-hole mount. Maximum drain-source resistance is 45 milliohms for efficient conduction. Rated for maximum power dissipation of 70 watts, suitable for power devices.

Wide operating temperature range from -55°C to 175°C ensures reliability in harsh environments. Designed with low gate charge of 14 nC at 30 V gate-source voltage for fast switching. Includes automotive standard compliance AEC-Q101 for automotive applications.

Compact dimensions of 6.6 mm length, 6.2 mm width, and 2.4 mm height. Conforms to UL standards for quality and safety assurance. Ideal for power electronics, industrial control, automotive, and switching circuits. Explore our complete range of STMicroelectronics Power MOSFETs and semiconductor devices suitable for diverse industrial and automotive applications at EnvMart.