STMicroelectronics Single RF3L N-Channel MOSFET 90 V Enhancement 5-Pin LBB RF3L05250CB4

STMicroelectronics RF3L05250CB4 is a high-performance single N-Channel MOSFET designed for wide-band communication and ISM frequency applications from HF to 1 GHz. Featuring a robust 90 V maximum drain-source voltage and a 5-pin LBB package, this device suits demanding industrial and commercial RF amplification tasks.

With a power rating of 250 W at 28/32 V, the MOSFET delivers high efficiency and linear gain, making it well-suited for class AB/B and class C amplifiers supporting diverse modulation formats. Its integrated electrostatic discharge (ESD) protection enhances its reliability in complex electronic environments.

The device allows a large positive and negative gate/source voltage range that optimizes class C operation, vital for high-efficiency RF designs. Compact surface mount LBB packaging with dimensions of 28.95mm length, 16.51mm width, and 4.85mm height facilitates space-saving PCB layouts.

Operating at frequencies up to 650 MHz and beyond, it is engineered for industrial, telecommunications, and laboratory applications requiring stable and efficient RF power transistors. It withstands a maximum operating temperature of 200°C, ensuring performance in challenging thermal environments.

Compliance with RoHS standards confirms its suitability for environmentally conscious manufacturing processes. This single configuration MOSFET enables designers to implement precise and reliable RF power stages.

Designed for RF power amplification in industrial and communication equipment. Compact 5-pin LBB surface mount footprint for efficient PCB integration. High power gain and efficiency suitable for class AB/B and C amplifiers.

Wide gate/source voltage range enhances modulation flexibility. Robust ESD protection supports long-term device reliability. Industrial-grade temperature tolerance for demanding applications. Explore a broad range of MOSFETs and RF components on EnvMart for your electronic design needs.