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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.3mm |
| Length | 6.5mm |
| Model | IPD85P04P4L06ATMA2 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | IPD |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 85A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 6.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 88W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 5V |
| Forward Voltage Vf | -1.3V |
Infineon IPD85P04P4L06ATMA2 is a P-Channel MOSFET designed for high current applications featuring a maximum continuous drain current of 85 A and a maximum drain-source voltage of 40 V. The device operates in enhancement mode and is housed in a compact TO-252 package with 3 pins, making it ideal for surface mount applications.
This MOSFET offers low drain-source resistance of 6.4 mΩ, which minimizes conduction losses and enhances thermal performance. It supports a maximum power dissipation of 88 W and is engineered for operation over a wide temperature range from -55°C to 175°C, enabling applications in harsh industrial and automotive environments.
The gate charge is optimized at 80 nC at a gate-source voltage of 5 V, which facilitates high switching speeds with reduced gate drive requirements. The device meets the AEC-Q101 automotive qualification standard, assuring reliability and quality in automotive electronics and other demanding sectors.
Compact dimensions (6.5 mm length, 6.22 mm width, 2.3 mm height) allow efficient PCB space utilization. The forward voltage of -1.3 V and P-channel type are suitable for power regulation circuits, DC-DC converters, and load switching tasks in industrial, automotive, and consumer electronic devices.
This MOSFET is RoHS-compliant and includes advanced features for thermal and switching efficiency, making it suitable for a variety of power management and control applications including automotive electronics, industrial automation, and general electronics design.
This MOSFET features a TO-252 package with 3 pins for surface mounting. Maximum drain-source resistance is 6.4 milliohms, optimizing conduction efficiency. Supports a maximum power dissipation of 88 watts for high-performance thermal management.
Operating temperature range from -55°C to 175°C for rugged industrial use. Typical gate charge of 80 nC at 5 V gate-source voltage ensures efficient switching. Compliant with automotive AEC-Q101 standard for quality assurance.
Compact size makes it ideal for space-constrained printed circuit boards. P-Channel type suitable for power switching and regulation tasks. Explore more Infineon MOSFETs and power semiconductors in the Electronics & Electricals category at EnvMart.
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