Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

Infineon IPD Type P-Channel MOSFET 85 A Maximum Continuous Drain Current 40 V Maximum Drain Source IPD85P04P4L06ATMA2

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 2.3mm
Length 6.5mm
Model IPD85P04P4L06ATMA2
Width 6.22mm
Mount Type Surface
Series IPD
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 85A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 6.4mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 88W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 5V
Forward Voltage Vf -1.3V

Key Features

  • This MOSFET features a TO-252 package with 3 pins for surface mounting.
  • Maximum drain-source resistance is 6.4 milliohms, optimizing conduction efficiency.
  • The device supports a maximum power dissipation of 88 watts suitable for high-performance applications.
  • Operating temperature range spans from -55°C minimum to 175°C maximum for rugged usage.
  • Typical gate charge is 80 nanoCoulombs at gate-source voltage of 5 V, ensuring efficient switching.
  • The MOSFET is compliant with AEC-Q101 automotive standards for reliability.
  • Compact dimensions of 6.5mm length, 6.22mm width, and 2.3mm height enable space-saving PCB layouts.
  • Forward voltage of -1.3 V and channel type P provide suitable electrical characteristics for power management.

Product Description

Infineon IPD85P04P4L06ATMA2 is a P-Channel MOSFET designed for high current applications featuring a maximum continuous drain current of 85 A and a maximum drain-source voltage of 40 V. The device operates in enhancement mode and is housed in a compact TO-252 package with 3 pins, making it ideal for surface mount applications.

This MOSFET offers low drain-source resistance of 6.4 mΩ, which minimizes conduction losses and enhances thermal performance. It supports a maximum power dissipation of 88 W and is engineered for operation over a wide temperature range from -55°C to 175°C, enabling applications in harsh industrial and automotive environments.

The gate charge is optimized at 80 nC at a gate-source voltage of 5 V, which facilitates high switching speeds with reduced gate drive requirements. The device meets the AEC-Q101 automotive qualification standard, assuring reliability and quality in automotive electronics and other demanding sectors.

Compact dimensions (6.5 mm length, 6.22 mm width, 2.3 mm height) allow efficient PCB space utilization. The forward voltage of -1.3 V and P-channel type are suitable for power regulation circuits, DC-DC converters, and load switching tasks in industrial, automotive, and consumer electronic devices.

This MOSFET is RoHS-compliant and includes advanced features for thermal and switching efficiency, making it suitable for a variety of power management and control applications including automotive electronics, industrial automation, and general electronics design.

This MOSFET features a TO-252 package with 3 pins for surface mounting. Maximum drain-source resistance is 6.4 milliohms, optimizing conduction efficiency. Supports a maximum power dissipation of 88 watts for high-performance thermal management.

Operating temperature range from -55°C to 175°C for rugged industrial use. Typical gate charge of 80 nC at 5 V gate-source voltage ensures efficient switching. Compliant with automotive AEC-Q101 standard for quality assurance.

Compact size makes it ideal for space-constrained printed circuit boards. P-Channel type suitable for power switching and regulation tasks. Explore more Infineon MOSFETs and power semiconductors in the Electronics & Electricals category at EnvMart.

Infineon IPD Type P-Channel MOSFET 85 A Maximum Continuous Drain Current 40 V Maximum Drain Source IPD85P04P4L06ATMA2
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum continuous drain current for this model is 85 A.

It has a maximum drain-source voltage of 40 V.

The device supports a maximum power dissipation of 88 watts.

The maximum drain-source resistance is 6.4 milliohms, optimizing conduction efficiency.

It operates within a temperature range of -55°C to 175°C.

The typical gate charge is 80 nanoCoulombs at a gate-source voltage of 5 V.

This model is housed in a TO-252 package with 3 pins for surface mounting.

It is compliant with the AEC-Q101 automotive standard for reliability.

The dimensions are 6.5 mm in length, 6.22 mm in width, and 2.3 mm in height.

This MOSFET features a P-channel type, suitable for power management applications.

The forward voltage is -1.3 V.

This MOSFET has a pin count of 3.

Related Products

Other Products from this brand

$0.94
$0.91 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$0.94
$0.91
Tax included