Infineon High Voltage N-Channel MOSFET, 50 A, 600 V, 22-Pin HDSOP IPDQ60R010S7AXTMA1

Infineon IPDQ60R010S7AXTMA1 is a high voltage N-Channel MOSFET engineered for power electronics applications that demand efficient switching and high current capacity. Designed according to the superjunction principle, this MOSFET minimizes conduction losses and enhances overall energy efficiency, facilitating compact and cost-effective designs.

This device features a maximum continuous drain current rating of 50 A and a maximum drain-source voltage of 600 V, making it well-suited for high voltage power control circuits including circuit breakers and motor drives.

The MOSFET comes in a 22-pin HDSOP surface mount package, providing a compact form factor with dimensions measuring 15.1 mm length, 2.35 mm width, and 21.06 mm height, supporting easy PCB integration.

Key electrical parameters include a low maximum on-resistance of 10 mΩ and a typical gate charge of 318 nC at gate-source voltage, supporting fast switching speeds and reduced power loss during operation. It also supports a maximum power dissipation of 694 W and withstands operating temperatures from -40°C to 150°C, ensuring reliable performance under demanding thermal conditions.

The device's maximum gate-source voltage of 20 V and a forward voltage of 820 mV ensure robust gate control and efficient conduction characteristics. Additionally, it meets the automotive standard AEC-Q101, reflecting its suitability for automotive and industrial applications.

Applications include industrial power management, automotive electronics, high voltage motor drives, circuit protection, and energy efficient power conversion systems. The Infineon IPDQ60R010S7AXTMA1 MOSFET supports designs requiring high current switching with low energy losses and enhanced durability.

Maximum continuous drain current of 50 A for high current applications. Maximum drain-source voltage rating of 600 V for robust operation. Low drain-source resistance of 10 mΩ to minimize losses. Wide operating temperature from -40°C to 150°C for reliability.

22-pin HDSOP package for surface mount assembly. Typical gate charge of 318 nC optimizing switching performance. High power dissipation at 694 W allowing thermal robustness. Complies with AEC-Q101 automotive quality standards.

Compact dimensions aid space-constrained PCB layouts. Forward voltage of 820 mV enhances conduction efficiency.

EnvMart offers this MOSFET as part of comprehensive electronic components suited for semiconductor applications, including power management and industrial electronics. Explore related Infineon components and other high-performance MOSFETs in the EnvMart catalog for your design requirements.