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onsemi P-Channel Power MOSFET 30 V 25 A Enhancement Mode 3-Pin Surface Mount TO-252 NTD25P03L

Category Power MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.38mm
Length 6.73mm
Model NTD25P03L
Width 6.22mm
Mount Type Surface
Series NTD25P03L
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 25A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 90mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 75W
Typical Gate Charge Qg @ Vgs 15nC
Maximum Gate Source Voltage Vgs -15, +15V

Key Features

  • Capable of a maximum continuous drain current of 25 A for robust power handling.
  • Rated for a maximum drain-source voltage of 30 V suitable for low voltage power switching.
  • Enhancement mode channel with Type P channel configuration for efficient switching.
  • Compact TO-252 surface mount package with 3 pins ensuring easy PCB integration.
  • Maximum power dissipation of 75 W allows for high power applications.
  • Typical gate charge of 15 nC optimizes switching speed and efficiency.
  • Wide operating temperature range from -55°C to 150°C ensures reliable performance under harsh conditions.
  • Maximum drain-source resistance of 90 mΩ minimizes conduction losses.

Product Description

onsemi NTD25P03L is a P-Channel Power MOSFET transistor designed specifically for discrete semiconductor power switching applications. It is housed in a compact TO-252 surface mount package featuring 3 pins, making it suitable for modern PCB assembly processes. This device supports a maximum continuous drain current of 25 A and can handle a drain-source voltage of up to 30 V, making it ideal for medium power low voltage switching applications in industrial and electronic equipment.

The MOSFET operates in enhancement mode with a Type P channel, offering efficient and reliable switching performance. It boasts a maximum power dissipation rating of 75 W while maintaining a low maximum drain-source resistance of 90 mΩ, which reduces conduction losses and improves overall efficiency. Its typical gate charge of 15 nC allows for fast switching speed, beneficial in applications requiring rapid response.

With a wide operating temperature range from -55°C to 150°C, the NTD25P03L withstands harsh environmental conditions typical in industrial, automotive, and power management systems. The gate-source voltage tolerance is ±15 V, accommodating standard drive voltage levels. Its compact physical dimensions (6.73 mm length, 6.22 mm width, 2.38 mm height) enable its use in space-limited layouts.

Maximum continuous drain current of 25 A supports demanding power loads. 30 V drain-source voltage rating suitable for low voltage power circuits. TO-252 surface mount package enables efficient production assembly. Low Rds(on) 90 mΩ supports energy-efficient operation.

Wide temperature range ensures reliability in diverse environments. Typical gate charge of 15 nC for optimized switching performance. Enhancement mode P-channel MOSFET suitable for power switching. 3 pin configuration for straightforward PCB integration.

Maximum power dissipation of 75 W supports moderate power applications.

This device is commonly used in industrial electronics, power supplies, motor control circuits, and other applications requiring reliable P-Channel MOSFETs. onsemi is a trusted brand known for quality semiconductor components that satisfy rigorous performance and reliability standards.

Explore more semiconductor and power electronics components on EnvMart for your next design or industrial application.

onsemi P-Channel Power MOSFET 30 V 25 A Enhancement Mode 3-Pin Surface Mount TO-252 NTD25P03L
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Frequently Asked Questions

The maximum continuous drain current for this model is 25 A, making it suitable for robust power handling applications.

This MOSFET has a maximum drain-source voltage rating of 30 V, which is appropriate for low voltage power switching applications.

The typical gate charge for the NTD25P03L is 15 nC, which helps optimize its switching speed and efficiency.

The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.

The NTD25P03L can dissipate a maximum power of 75 W, allowing it to handle moderate power applications effectively.

This model features a maximum drain-source resistance of 90 mΩ, which minimizes conduction losses during operation.

The operating temperature range for this MOSFET is from -55°C to 150°C, ensuring reliable performance in harsh conditions.

This model has a 3-pin configuration, facilitating straightforward integration into PCB designs.

The NTD25P03L uses a Type P channel configuration, which is characteristic of enhancement mode MOSFETs.

The maximum gate-source voltage tolerance for this model is ±15 V, accommodating standard drive voltage levels.

This P-channel MOSFET is commonly used in industrial electronics, power supplies, and motor control circuits.

This model supports surface mounting, making it suitable for modern PCB assembly processes.

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