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DiodesZetex PNP Transistor 5.5 A, 30 V, 4-Pin SOT-223 Surface Mount, Series FZT949 Model FZT949TA

Category Bipolar Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.65mm
Length 6.55mm
Model FZT949TA
Width 7.1mm
Mount Type Surface
Series FZT949
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo -30V
Minimum DC Current Gain hFE 75
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 3W
Maximum DC Collector Current Idc -5.5A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Supports maximum collector current of -5.5 amperes.
  • Operates at collector-emitter voltage up to -30 volts.
  • Utilizes a surface mount 4-pin SOT-223 package type for PCB integration.
  • Features single transistor configuration with PNP polarity.
  • Offers maximum power dissipation of 3 watts.
  • Ensures reliable operation from -55°C to 150°C temperature range.
  • Achieves transition frequency up to 100 MHz suitable for high-frequency applications.
  • Complies with automotive standard AEC-Q101 for automotive reliability.

Product Description

DiodesZetex FZT949TA is a high-performance PNP bipolar transistor designed for versatile surface mount electronic applications. Featuring a maximum DC collector current of -5.5 A and a collector-emitter voltage rating of -30 V, it fulfills demanding power and voltage requirements. Its compact 4-pin SOT-223 package facilitates efficient PCB assembly and integration in modern electronics manufacturing.

The transistor boasts a maximum power dissipation of 3 W and operates reliably across a broad temperature spectrum from -55°C to 150°C, making it suitable for industrial and automotive environments. With a transition frequency (ft) of 100 MHz, it supports applications requiring moderate to high-frequency switching and amplification.

Designed as a single PNP transistor configuration, the FZT949TA features a maximum collector-base voltage of 50 V and an emitter-base voltage up to 6 V. Its DC current gain (hFE) starts at 75, ensuring effective amplification capabilities. The product complies with automotive standard AEC-Q101, indicating robust quality and endurance against automotive stress factors.

The physical package measures 6.55 mm in length, 7.1 mm in width, and 1.65 mm in height, optimized for surface mounting techniques. The transistor is ideal for use in electronic components, power and connector devices, and semiconductor discrete transistor applications in industrial, automotive, and consumer electronics sectors.

Supports maximum collector current of -5.5 A. Collector-emitter voltage rated at -30 V for reliable operation. Compact surface mount 4-pin SOT-223 package. Single PNP transistor configuration for discrete applications. Power dissipation capability up to 3 W ensures stable thermal performance.

Wide operating temperature range from -55°C to 150°C. High transition frequency up to 100 MHz for fast switching. Compliant with automotive standard AEC-Q101. Package dimensions of 6.55 mm (L) x 7.1 mm (W) x 1.65 mm (H).

Perfect for automotive, industrial, and electronics uses.

This DiodesZetex FZT949TA transistor delivers reliable performance for a variety of semiconductor circuit designs requiring PNP transistors with compact packaging and automotive-grade standards. Consider exploring additional Bipolar Transistor products on EnvMart for specialized applications and interchangeability.

DiodesZetex PNP Transistor 5.5 A, 30 V, 4-Pin SOT-223 Surface Mount, Series FZT949 Model FZT949TA
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Frequently Asked Questions

The maximum collector current for this model is -5.5 A.

The collector-emitter voltage rating is -30 V.

It has a maximum power dissipation capability of 3 W.

The operating temperature range is from -55°C to 150°C.

This model utilizes a 4-pin SOT-223 surface mount package type.

The transition frequency is up to 100 MHz, suitable for high-frequency applications.

The minimum DC current gain (hFE) is 75.

It complies with the automotive standard AEC-Q101.

The dimensions are 6.55 mm in length, 7.1 mm in width, and 1.65 mm in height.

The maximum emitter-base voltage (VEBO) is 6 V.

The maximum collector-base voltage (VCBO) is 50 V.

It features a single PNP transistor configuration.

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