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onsemi N-Channel MOSFET 433 A, 30 V Enhancement, 5-Pin DFN Package NTMFS0D6N03CT1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 6.3mm |
| Length | 5.3mm |
| Model | NTMFS0D6N03CT1G |
| Width | 1.1mm |
| Mount Type | Surface |
| Series | NTMFS0D6N |
| Maximum Operating Temperature | 175°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 5 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 433A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.62mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 145nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Offers ultra-low on-resistance of 0.62 milliohms to improve system efficiency.
- Rated for continuous drain current up to 433 amperes for high power applications.
- Designed for surface mount with a compact DFN package type.
- Supports a maximum power dissipation of 200 watts to manage heat effectively.
- Features an enhancement mode channel for controlled switching.
- Operates reliably from −55°C up to 175°C maximum operating temperature.
- Typical gate charge at Vgs is 145 nanocoulombs ensuring efficient gate drive.
- Maximum gate-source voltage rating of ±20 volts for robust operation.
Product Description
onsemi NTMFS0D6N03CT1G is a high-performance N-Channel MOSFET designed for applications requiring high continuous drain current of 433 amperes and a maximum drain-source voltage of 30 volts.
This 5-pin DFN surface mount device features an ultra-low on-resistance of just 0.62 milliohms, improving system efficiency by reducing conduction losses. Its enhancement mode channel enables reliable switching characteristics, suitable for power management in electronic and industrial applications.
The device tolerates a wide operating temperature range from -55°C to 175°C, ensuring durability and stability in harsh environments. With a maximum power dissipation rating of 200 watts and a low typical gate charge of 145 nC at Vgs, this MOSFET is optimized for efficient heat dissipation and fast switching.
Its compact 5.3 x 1.1 x 6.3 mm dimensions allow for space-saving PCB designs, and the maximum gate-source voltage of ±20 volts grants robustness against voltage spikes. Commonly applied in industrial power supplies, automotive electronics, consumer devices, and advanced control systems, this MOSFET enhances performance and efficiency.
Offers ultra-low on-resistance to improve efficiency. High continuous drain current capability up to 433 A. Surface mount DFN package for compact design. Supports 200 W power dissipation for thermal management. Enhancement mode channel for reliable switching.
Wide operating temperature range from -55°C to 175°C. Typical gate charge at Vgs of 145 nC. Maximum gate-source voltage of ±20 V for protection. Low forward voltage drop of 1.2 V. Compact physical dimensions. Explore more in the Electronics & Electricals category for high-performance MOSFETs and discrete semiconductors at EnvMart.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 433 amperes, making it suitable for high power applications.
This N-channel MOSFET has a maximum drain-source voltage rating of 30 volts.
The dimensions of the DFN package are 5.3 mm in length, 1.1 mm in width, and 6.3 mm in height.
The typical gate charge at Vgs for this model is 145 nanocoulombs.
This MOSFET supports a maximum power dissipation of 200 watts, allowing for effective heat management.
It operates reliably within a temperature range from -55°C to 175°C.
The on-resistance of this model is 0.62 milliohms, which helps improve system efficiency.
This device features an enhancement mode channel, which provides controlled switching characteristics.
The maximum gate-source voltage rating for this MOSFET is ±20 volts, ensuring robust operation.
It is commonly applied in industrial power supplies, automotive electronics, consumer devices, and advanced control systems.
The forward voltage drop for this model is 1.2 volts.
This MOSFET has a pin count of 5, suitable for surface mount applications.
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