onsemi N-Channel MOSFET Power Transistor 287 A, 60 V, Enhancement Mode, 4-Pin DFN Package NVMFS5C604NLAFT1G

onsemi NVMFS5C604NLAFT1G is a high-performance N-Channel Power MOSFET designed for demanding electronic applications requiring high current and voltage handling capabilities. This enhancement mode device offers a continuous drain current rating of 287 A and can withstand a maximum drain-source voltage of 60 V. Its compact 4-pin DFN surface mount package provides optimal thermal and electrical performance with a low-profile height of 1.05 mm.

The MOSFET demonstrates excellent conduction characteristics, featuring a very low drain-source resistance of 1.2 milliohms which minimizes power losses and heat generation during operation. With a maximum power dissipation rating of 200 W, this transistor supports robust electrical loads common in industrial, automotive, and power management applications.

It operates reliably across a wide temperature range from -55°C to 175°C, making it suitable for harsh environments. The device’s typical gate charge of 120 nC ensures fast switching speeds essential for efficient power conversion. The maximum gate-source voltage rating of 20 V protects the device from voltage spikes.

Manufactured following strict RoHS and Pb-Free compliance guidelines, this MOSFET is environmentally friendly and fit for worldwide deployment. Furthermore, it complies with the AEC-Q101 automotive standard, assuring suitability for critical automotive electronics systems.

Enhancement mode conduction for efficient power switching. 4-pin DFN surface mount package with compact dimensions of 5.1 mm length and 6.1 mm width. Low forward voltage of 1.2 V reduces power loss during switching. Ideal for high current power management in industrial, automotive, and electronic applications.

AEC-Q101 qualified ensuring automotive reliability standards. RoHS and Pb-Free compliant for environmental safety. Temperature ratings support operation in extreme industrial conditions.

This NVMFS5C604NLAFT1G MOSFET is a key component for high efficiency power conversion circuits including power supplies, motor drives, and automotive electronic control units. Its robust thermal and electrical characteristics make it a reliable choice in demanding applications requiring compact, surface mount Power MOSFETs.

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