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Infineon HEXFET N-Channel MOSFET & Diode 62 A 75 V Surface Mount 3-Pin TO-263 IRF3007STRLPBF

Category MOSFETs Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 4.83mm
Length 10.67mm
Model IRF3007STRLPBF
Width 9.65mm
Mount Type Surface
Series HEXFET
Package Type TO-263
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 62A
Maximum Drain Source Voltage Vds 75V
Maximum Drain Source Resistance Rds 12.6mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 120W
Typical Gate Charge Qg @ Vgs 89nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.3V

Key Features

  • This MOSFET type is N-channel with an enhancement channel mode.
  • It has a maximum continuous drain current of 62 A and maximum drain-source voltage of 75 V.
  • The device package is TO-263, suitable for surface mounting with 3 pins.
  • Maximum power dissipation rating is 120 W with a typical gate charge of 89 nC.
  • It features a forward voltage of 1.3 V and maximum gate-source voltage of ±20 V.
  • Physical dimensions are 10.67 mm length, 9.65 mm width, and 4.83 mm height.
  • Optimized for high switching frequency applications such as SMPS, motor control, and inverters.

Product Description

Infineon IRF3007STRLPBF is a HEXFET N-Channel power MOSFET & diode combining high efficiency with robustness for demanding industrial and electronic applications. The device supports a maximum continuous drain current of 62 A and withstands drain-source voltages up to 75 V. It uses a surface-mounted TO-263 3-pin package that ensures efficient heat dissipation and reliable mounting.

The enhancement channel mode MOSFET is engineered with a planar cell structure to enhance the safe operating area and supports high switching frequencies suitable for switched-mode power supplies (SMPS), battery-powered equipment, motor controls, drives, inverters, and computing devices.

Key electrical characteristics include a maximum power dissipation of 120 W, gate charge of 89 nC at typical gate-source voltage, and a forward voltage of 1.3 V. The device’s maximum gate-source voltage is 20 V, adhering to reliability standards without automotive certification.

Physical dimensions are compact with a length of 10.67 mm, width of 9.65 mm, and height of 4.83 mm, facilitating integration into dense circuit layouts. The product complies with JEDEC qualification standards and is broadly available through distribution partners.

Industrial usage spans electronic power control, consumer electronics, telecommunications, and automotive systems where high performance and cost effectiveness are critical. This MOSFET is part of Infineon’s OptiMOS family, which provides improved figure of merit to enhance overall system efficiency.

This MOSFET features an N-channel enhancement type for efficient switching. The maximum continuous drain current rating is 62 Amperes. Maximum drain-source voltage is 75 Volts suitable for various power applications. TO-263 package ensures surface mount compatibility and thermal management.

Maximum power dissipation rated at 120 Watts supports high load conditions. The device includes a typical gate charge of 89 nC for responsive switching. Compact form factor dimensions allow easy PCB integration. Explore more Infineon MOSFETs and electronic components to suit your industrial, manufacturing, and electronic circuit board needs at EnvMart.

Infineon HEXFET N-Channel MOSFET & Diode 62 A 75 V Surface Mount 3-Pin TO-263 IRF3007STRLPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 62 A.

It supports a maximum drain-source voltage of 75 V.

The physical dimensions of the TO-263 package are 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.

The maximum power dissipation rating is 120 W.

The typical gate charge is 89 nC at the specified gate-source voltage.

The forward voltage of this model is 1.3 V.

The maximum gate-source voltage is ±20 V.

This model utilizes an N-channel enhancement type channel.

The TO-263 package has 3 pins.

The maximum drain-source resistance is 12.6 mΩ.

The IRF3007STRLPBF is manufactured in India.

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