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Infineon HEXFET N-Channel MOSFET & Diode 162 A, 40 V Enhancement, 3-Pin TO-263 AUIRF1404STRL
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | AUIRF1404STRL |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 162A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 160nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Advanced planar HEXFET technology ensures low on-resistance and high efficiency.
- Operating temperature range from -55°C to 175°C supporting harsh environments.
- Maximum power dissipation of 200 W enables high-performance operation.
- Surface mount TO-263 package facilitates easy PCB integration.
- Automotive qualified with AEC-Q101 standard for reliability.
- Fast switching speed enhances device performance in power circuits.
- Fully avalanche rated for ruggedized device operation.
- Low typical gate charge of 160 nC at Vgs enhances drive efficiency.
Product Description
Infineon AUIRF1404STRL HEXFET N-Channel MOSFET & Diode is engineered specifically for automotive and industrial power applications. Featuring a 3-pin TO-263 surface mount package, it provides efficient switching with a maximum continuous drain current of 162 A and a maximum drain-source voltage of 40 V.
It utilizes advanced planar HEXFET technology to deliver low on-resistance of 4 mΩ, enabling reduced conduction losses and improved thermal performance. The device operates reliably at temperatures ranging from -55°C to 175°C, suitable for harsh industrial environments.
With a maximum power dissipation rating of 200 W and fast switching capabilities, this MOSFET is ideal for automotive powertrain control, motor drives, and other high power switching applications. It is fully avalanche rated, allowing repetitive avalanche conditions up to junction maximum temperature, ensuring ruggedness and reliability.
The typical gate charge of 160 nC at gate-source voltage of 10 V ensures efficient gate driving with minimized switching losses. This MOSFET includes an integrated diode for improved switching performance.
Advanced planar HEXFET power MOSFET technology with low Rds(on). Fast switching speed and ruggedized design for reliable use. AEC-Q101 automotive qualification standard compliance. Lead-free, RoHS compliant construction ideal for environmentally conscious designs.
Package height 4.83 mm, length 10.67 mm, width 9.65 mm for compact PCB layout. Maximum gate-source voltage of 20 V protects the device from electrical overstress. Forward diode voltage of 1.3 V enhances switching efficiency.
This Infineon HEXFET MOSFET is suitable for use in industrial, automotive, manufacturing, electric vehicle, and power management applications. It delivers robust and efficient switching performance required for modern high power electronic systems. Explore the Infineon product range on EnvMart for advanced semiconductor solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 162 A.
This MOSFET has a maximum drain-source voltage of 40 V.
It operates reliably within a temperature range of -55°C to 175°C.
The package type is TO-263, which is suitable for surface mounting.
The maximum power dissipation rating is 200 W.
The typical gate charge at a gate-source voltage of 10 V is 160 nC.
The maximum gate-source voltage is 20 V, which protects the device from electrical overstress.
The forward voltage of the integrated diode is 1.3 V, enhancing switching efficiency.
It complies with the AEC-Q101 automotive standard for reliability.
The dimensions are 4.83 mm in height, 10.67 mm in length, and 9.65 mm in width.
It utilizes advanced planar HEXFET technology, which ensures low on-resistance and high efficiency.
This model is suitable for automotive powertrain control, motor drives, and other high power switching applications.
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