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Infineon CoolMOS P7 N-Channel MOSFET, 8 A, 800 V Enhancement Mode, 3-Pin TO-220 IPA80R600P7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPA80R600P7XKSA1 |
| Mount Type | Surface |
| Series | CoolMOS P7 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 600mΩ |
| Channel Mode | Enhancement |
Key Features
- Designed primarily for flyback applications including adapters and chargers.
- Delivers up to 0.6% efficiency improvement over previous generations.
- Operates with 2°C to 8°C lower MOSFET temperature for enhanced thermal performance.
- Supports higher power density designs with lower switching losses.
- Features low R_DS(on) for improved conduction efficiency.
- Eases design-in and reduces assembly effort for manufacturing.
- Improves production yield by minimizing ESD-related failures.
- Ideal for LED drivers, audio SMPS, auxiliary and industrial power supplies.
Product Description
Infineon IPA80R600P7XKSA1 CoolMOS P7 N-Channel MOSFET is an advanced power semiconductor device designed for efficient and reliable switching. Rated for 8 amperes of maximum continuous drain current and 800 volts drain-source voltage, this 3-pin TO-220 package device is optimized for flyback converter applications commonly found in adapters, chargers, LED drivers, and audio switch-mode power supplies.
This device features an enhancement mode channel realized with CoolMOS P7 technology, providing significant improvements including up to 0.6% better efficiency and 2°C to 8°C lower operating temperature compared to predecessor and competitor devices in typical flyback configurations. These improvements facilitate higher power density designs by reducing switching losses and delivering lower R_DS(on) values.
Easy to drive and integrate, the IPA80R600P7XKSA1 helps reduce bill of material costs and assembly complexity. Enhanced robustness reduces electrostatic discharge failures, resulting in better production yields and fewer field returns.
Applications include industrial power supplies, auxiliary power sources, LED lighting drivers, and audio-related switch-mode power supply units. Its surface mount TO-220 package ensures compatibility with standard PCB assembly processes.
Designed for high-efficiency flyback applications such as adapter and charger circuits. Improves thermal performance by operating at significantly lower temperatures. Reduces power losses through low R_DS(on) and switching losses.
Compact 3-pin TO-220 package supports easy mounting and thermal management. Minimizes ESD-related failures for higher manufacturing reliability. Enables cost savings by lowering BOM and production effort. Suitable for LED driver, audio SMPS, and industrial power use cases.
Explore EnvMart's extensive assortment of Infineon semiconductor components to find compatible and complementary parts for your industrial and electronic projects.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The Infineon IPA80R600P7XKSA1 has a maximum continuous drain current of 8 amperes.
This model is rated for a maximum drain-source voltage of 800 volts.
It comes in a 3-pin TO-220 package type, which is suitable for surface mounting.
The maximum drain-source resistance (R_DS(on)) for this device is 600 mΩ.
It is designed primarily for flyback applications, including adapters, chargers, LED drivers, and audio switch-mode power supplies.
It operates at 2°C to 8°C lower temperatures compared to previous generations, enhancing thermal performance.
This device utilizes CoolMOS P7 technology, which provides significant efficiency improvements and lower switching losses.
Yes, it is designed to be easy to drive and integrate, reducing assembly complexity and bill of materials costs.
The channel type of this MOSFET is N-channel, which is typical for enhancement mode devices.
The Infineon IPA80R600P7XKSA1 is manufactured in India.
It minimizes ESD-related failures, which improves production yields and reduces field returns.
It features low R_DS(on) values and reduced switching losses, facilitating higher power density designs.
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