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Infineon OptiMOS N-Channel MOSFET 80 A 55 V Enhancement Mode 3-Pin TO-220 IPP80N06S209AKSA2

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 9.45mm
Length 10.36mm
Model IPP80N06S209AKSA2
Width 4.57mm
Mount Type Through Hole
Series OptiMOS
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 80A
Maximum Drain Source Voltage Vds 55V
Maximum Drain Source Resistance Rds 9.1mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 190W
Typical Gate Charge Qg @ Vgs 60nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.3V

Key Features

  • Features enhancement mode channel operation for precise switching control.
  • Employs a TO-220 package with 3 pins for through-hole mounting.
  • Maximum drain-source resistance of 9.1 milliohms ensuring efficient conduction.
  • Supports maximum power dissipation of 190 watts for robust performance.
  • Operates reliably between -55 °C and 175 °C for automotive and industrial uses.
  • Typical gate charge of 60 nanocoulombs at 60 volts enhances switching speed.
  • Maximum gate-source voltage rated at 20 volts provides electrical protection.
  • Complies with AEC-Q101 automotive standard guaranteeing quality and reliability.

Product Description

Infineon IPP80N06S209AKSA2 is an OptiMOS N-Channel Enhancement Mode MOSFET designed for high current automotive and industrial applications. It features an 80 ampere maximum continuous drain current and a 55 volt drain-source voltage, making it suitable for controlling valves, solenoids, lighting, and single-ended motors with high efficiency and reliability.

This MOSFET is packaged in a TO-220 form factor with 3 pins for through-hole mounting, facilitating easy integration into circuit boards. Its maximum drain-source resistance of 9.1 milliohms reduces conduction losses and improves power efficiency.

The device supports power dissipation of up to 190 watts and can operate in a temperature range from -55 °C to 175 °C, allowing usage in harsh automotive and industrial environments. A 60 nanocoulombs typical gate charge at 60 volts enables fast switching performance, and a maximum gate-source voltage rating of 20 volts ensures device protection during operation.

Infineon's automotive standard AEC-Q101 compliance guarantees high reliability and quality, making this MOSFET ideal for automotive systems needing robust power management solutions. Physical dimensions of 9.45 mm height, 10.36 mm length, and 4.57 mm width support efficient space use on printed circuit boards.

Enhancement mode channel operation for precise electronic control. TO-220 3-pin package suitable for through-hole mounting applications. Low maximum Rds(on) of 9.1 mΩ enhancing conduction efficiency. High power dissipation capability of 190 W supports demanding applications.

Wide operating temperature range from -55 °C up to 175 °C. Typical gate charge of 60 nC promotes fast switching cycles. Maximum gate-source voltage of 20 V safeguards device integrity. Certified to AEC-Q101 automotive quality standards.

Compact physical size optimized for PCB integration.

This N-Channel MOSFET is well-suited for industrial, automotive, HVAC, and manufacturing sectors where reliable, high-current switching elements are critical. Its robust specifications enable efficient control of actuators and motors in demanding environments.

Explore more Infineon MOSFETs and semiconductor components for your design and repair needs through EnvMart’s electronics category.

Infineon OptiMOS N-Channel MOSFET 80 A 55 V Enhancement Mode 3-Pin TO-220 IPP80N06S209AKSA2
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Frequently Asked Questions

The maximum continuous drain current for this model is 80 amperes.

This MOSFET has a maximum drain-source voltage rating of 55 volts.

It supports a maximum power dissipation of 190 watts.

The maximum drain-source resistance is 9.1 milliohms, which enhances conduction efficiency.

The typical gate charge at 60 volts is 60 nanocoulombs.

It operates reliably between -55 °C and 175 °C.

This model is packaged in a TO-220 form factor and is designed for through-hole mounting.

It complies with the AEC-Q101 automotive standard, ensuring quality and reliability for automotive applications.

The dimensions are 9.45 mm in height, 10.36 mm in length, and 4.57 mm in width.

The maximum gate-source voltage rating is 20 volts, providing electrical protection during operation.

It is suitable for controlling valves, solenoids, lighting, and single-ended motors in automotive and industrial applications.

This model utilizes an N-channel type for enhancement mode operation.

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