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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.45mm |
| Length | 10.36mm |
| Model | IPP80N06S209AKSA2 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | OptiMOS |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 9.1mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 60nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Infineon IPP80N06S209AKSA2 is an OptiMOS N-Channel Enhancement Mode MOSFET designed for high current automotive and industrial applications. It features an 80 ampere maximum continuous drain current and a 55 volt drain-source voltage, making it suitable for controlling valves, solenoids, lighting, and single-ended motors with high efficiency and reliability.
This MOSFET is packaged in a TO-220 form factor with 3 pins for through-hole mounting, facilitating easy integration into circuit boards. Its maximum drain-source resistance of 9.1 milliohms reduces conduction losses and improves power efficiency.
The device supports power dissipation of up to 190 watts and can operate in a temperature range from -55 °C to 175 °C, allowing usage in harsh automotive and industrial environments. A 60 nanocoulombs typical gate charge at 60 volts enables fast switching performance, and a maximum gate-source voltage rating of 20 volts ensures device protection during operation.
Infineon's automotive standard AEC-Q101 compliance guarantees high reliability and quality, making this MOSFET ideal for automotive systems needing robust power management solutions. Physical dimensions of 9.45 mm height, 10.36 mm length, and 4.57 mm width support efficient space use on printed circuit boards.
Enhancement mode channel operation for precise electronic control. TO-220 3-pin package suitable for through-hole mounting applications. Low maximum Rds(on) of 9.1 mΩ enhancing conduction efficiency. High power dissipation capability of 190 W supports demanding applications.
Wide operating temperature range from -55 °C up to 175 °C. Typical gate charge of 60 nC promotes fast switching cycles. Maximum gate-source voltage of 20 V safeguards device integrity. Certified to AEC-Q101 automotive quality standards.
Compact physical size optimized for PCB integration.
This N-Channel MOSFET is well-suited for industrial, automotive, HVAC, and manufacturing sectors where reliable, high-current switching elements are critical. Its robust specifications enable efficient control of actuators and motors in demanding environments.
Explore more Infineon MOSFETs and semiconductor components for your design and repair needs through EnvMart’s electronics category.
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