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Wurth Elektronik Phototransistor 4-Pin DIP, Collector Emitter Voltage 35V, Isolation Voltage 500Vrms 140817144300

Category Phototransistor Brand Wurth Elektronik Condition New

Specifications

Country of Origin China
Brand Wurth Elektronik
Output type Phototransistor
Series WL-OCPT
Package Type DIP
Number Of Channels 1
Maximum Forward Voltage 1.4V
Number of Pins 4

Key Features

  • Equipped with a maximum forward voltage of 1.4V ensuring efficient operation.
  • Single channel phototransistor designed for sensitivity and accuracy.
  • DIP package type suitable for easy PCB mounting and integration.
  • High collector emitter voltage of 35V supporting durable use.
  • Isolation voltage rated at 500Vrms for electrical safety.
  • Constructed with plastic housing, white color, compliant with RoHS and halogen-free standards.
  • Operational temperature range from -55 up to +110 degrees Celsius.

Product Description

Wurth Elektronik 140817144300 phototransistor features a 4-pin DIP package designed for optoelectronic detection in various industrial and electronic applications. This phototransistor model provides a maximum forward voltage of 1.4V and robust collector emitter voltage of 35V, enabling reliable signal output under diverse conditions.

The device is designed as a single channel phototransistor, ensuring precise photodetection and responsiveness. The plastic white housing offers durability and ease of installation on PCBs, with its DIP format facilitating straightforward integration into electronic circuits.

Rated with an isolation voltage of 500Vrms, this phototransistor ensures safety and noise immunity in electronic designs. The component complies with RoHS directives and is halogen-free, supporting environmentally responsible manufacturing and use.

The operating temperature range of -55 to +110 °C allows this phototransistor to function effectively across a wide spectrum of environments, making it suitable for industrial, laboratory, and commercial electronic equipment.

Applications include optocouplers, signal detection, and other photodetection needs in sectors such as manufacturing, automation, circuit design, and instrumentation. Maximum forward voltage of 1.4V provides efficient electrical properties.

Single channel with 4 pins supports precision and compatibility. DIP packaging eases assembly in PCB applications. Isolation voltage of 500Vrms enhances electrical safety. Plastic white housing compliant with environmental standards.

Wideoperating temperature range from -55 to +110 degrees Celsius. Discover more Phototransistor variants and electronic components within the Electronics & Electricals category at EnvMart for all your design and manufacturing needs.

Wurth Elektronik Phototransistor 4-Pin DIP, Collector Emitter Voltage 35V, Isolation Voltage 500Vrms 140817144300
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Frequently Asked Questions

The maximum collector emitter voltage of this phototransistor is 35V, allowing for reliable signal output in various applications.

This phototransistor has an isolation voltage rated at 500Vrms, ensuring electrical safety and noise immunity in electronic designs.

The operating temperature range for this model is from -55 to +110 degrees Celsius, making it suitable for diverse environmental conditions.

This phototransistor features a 4-pin DIP package, facilitating easy integration into electronic circuits.

The maximum forward voltage for this phototransistor is 1.4V, which ensures efficient operation in various applications.

It is constructed with a plastic housing in white color, which is compliant with RoHS and halogen-free standards.

The output type of this component is a phototransistor, designed for optoelectronic detection in various applications.

This model is suitable for applications such as optocouplers, signal detection, and other photodetection needs in sectors like manufacturing and automation.

This phototransistor belongs to the WL-OCPT series, which is designed for specific optoelectronic applications.

Yes, the DIP package type of this phototransistor is suitable for easy PCB mounting and integration.

The country of origin for this phototransistor is China.

This model is designed as a single channel phototransistor, ensuring precise photodetection and responsiveness.

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