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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP80NF10 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 15mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 135nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
STMicroelectronics STP80NF10 is a N-Channel Enhancement Mode MOSFET belonging to the STripFET II series, offering excellent performance for power switching and amplification in electronic devices. This device features a maximum continuous drain current of 80 A and a maximum drain-source voltage rating of 100 V, making it suitable for demanding industrial and commercial applications.
The MOSFET is packaged in a 3-pin TO-220 form factor designed for through-hole mounting, allowing reliable integration into PCBs and power modules. Its ultra-low gate charge of 135 nC and low on-resistance of 15 mΩ help reduce power dissipation and improve switching speed efficiency in power converters, motor control, and power supply circuits.
Operating capability spans from -55°C minimum to 175°C maximum temperature, enabling use in a wide range of environments including industrial controls, automotive electronics, and consumer appliances. With a maximum power dissipation of 300 W, this device supports high power loads effectively.
Compact physical dimensions of 10.4 mm length, 9.15 mm height, and 4.6 mm width make it suitable for space-constrained designs. The MOSFET complies with no specific automotive or other standards but provides robust and reliable electrical performance for various discrete semiconductor applications.
High continuous drain current capacity of 80 A. Maximum drain-source voltage rating of 100 V. Low on-resistance reduces conduction losses. Wide operating temperature range for versatile use cases. Compact TO-220 package supports reliable heat dissipation.
Ultra-low gate charge enhances switching efficiency. High power dissipation capability at 300 W. Typical forward voltage of 1.3 V for efficient operation. 3-pin, through-hole mount design for PCB integration. Designed for electronic component and discrete semiconductor applications.
This STP80NF10 MOSFET is applicable in industrial, automotive, power management, and electronic component sectors. It is ideal for power supplies, motor drivers, inverters, and other high-current switching applications. EnvMart users can find this product under the Electronics & Electricals category, specifically in Discrete Semiconductors and MOSFET subcategories for focused procurement.
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