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STMicroelectronics STripFET II N-Channel MOSFET, 80 A, 100 V, Enhancement Mode, 3-Pin TO-220 STP80NF10

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 9.15mm
Length 10.4mm
Model STP80NF10
Width 4.6mm
Mount Type Through Hole
Series STripFET II
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 80A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 15mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 300W
Typical Gate Charge Qg @ Vgs 135nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V

Key Features

  • Suitable for high power switching applications.
  • Features ultra-low gate charge for efficient switching.
  • Enhanced reliability with high maximum power dissipation of 300 W.
  • Operating temperature range from -55°C to 175°C for diverse environments.
  • Low on-resistance at 15 mΩ reduces conduction losses.
  • Typical gate charge of 135 nC optimizes drive requirements.
  • Robust maximum gate-source voltage rating of ±20 V.
  • Compact dimensions with length 10.4 mm, height 9.15 mm, and width 4.6 mm.

Product Description

STMicroelectronics STP80NF10 is a N-Channel Enhancement Mode MOSFET belonging to the STripFET II series, offering excellent performance for power switching and amplification in electronic devices. This device features a maximum continuous drain current of 80 A and a maximum drain-source voltage rating of 100 V, making it suitable for demanding industrial and commercial applications.

The MOSFET is packaged in a 3-pin TO-220 form factor designed for through-hole mounting, allowing reliable integration into PCBs and power modules. Its ultra-low gate charge of 135 nC and low on-resistance of 15 mΩ help reduce power dissipation and improve switching speed efficiency in power converters, motor control, and power supply circuits.

Operating capability spans from -55°C minimum to 175°C maximum temperature, enabling use in a wide range of environments including industrial controls, automotive electronics, and consumer appliances. With a maximum power dissipation of 300 W, this device supports high power loads effectively.

Compact physical dimensions of 10.4 mm length, 9.15 mm height, and 4.6 mm width make it suitable for space-constrained designs. The MOSFET complies with no specific automotive or other standards but provides robust and reliable electrical performance for various discrete semiconductor applications.

High continuous drain current capacity of 80 A. Maximum drain-source voltage rating of 100 V. Low on-resistance reduces conduction losses. Wide operating temperature range for versatile use cases. Compact TO-220 package supports reliable heat dissipation.

Ultra-low gate charge enhances switching efficiency. High power dissipation capability at 300 W. Typical forward voltage of 1.3 V for efficient operation. 3-pin, through-hole mount design for PCB integration. Designed for electronic component and discrete semiconductor applications.

This STP80NF10 MOSFET is applicable in industrial, automotive, power management, and electronic component sectors. It is ideal for power supplies, motor drivers, inverters, and other high-current switching applications. EnvMart users can find this product under the Electronics & Electricals category, specifically in Discrete Semiconductors and MOSFET subcategories for focused procurement.

STMicroelectronics STripFET II N-Channel MOSFET, 80 A, 100 V, Enhancement Mode, 3-Pin TO-220 STP80NF10
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Frequently Asked Questions

The maximum continuous drain current for this model is 80 A.

The maximum drain-source voltage rating is 100 V.

The typical gate charge is 135 nC, which optimizes drive requirements.

The on-resistance is 15 mΩ, which helps reduce conduction losses.

It operates within a temperature range from -55°C to 175°C.

The maximum power dissipation capability is 300 W.

This model uses a TO-220 package type designed for through-hole mounting.

The dimensions are 10.4 mm in length, 9.15 mm in height, and 4.6 mm in width.

The maximum gate-source voltage rating is ±20 V.

It is suitable for power supplies, motor drivers, inverters, and other high-current switching applications.

This model has a pin count of 3.

The channel type is N-channel, and it operates in enhancement mode.

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