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Infineon N-Channel Insulated Gate Bipolar Transistor IKW40N60H3FKSA1, 40 A, 600 V, 3-Pin TO-247, Through Hole
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKW40N60H3FKSA1 |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Energy Rating | 2.12mJ |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS, JEDEC |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 40A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 306W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
Key Features
- Features a 3-pin TO-247 package suitable for through-hole mounting.
- Maximum continuous collector current of 40 amperes with 306 watts power dissipation capability.
- TrenchStop technology ensures very low saturation voltage and minimal turn-off losses.
- Operates within a temperature range of -40°C to 175°C for high reliability.
- Maximum gate-emitter voltage is ±20 V ensuring safe gate operation.
- Switching speed of 227 nanoseconds supports fast switching applications.
- RoHS and JEDEC compliant ensuring quality and environmental standards.
- Low electromagnetic interference (EMI) suitable for industrial and automotive use.
Product Description
The Infineon IKW40N60H3FKSA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power electronics applications requiring efficient switching and high current capabilities.
This device features TrenchStop technology, which provides very low collector-emitter saturation voltage (VceSAT) of 2.5 V and reduces turn-off losses, enabling enhanced system efficiency and thermal management.
Encapsulated in a 3-pin TO-247 package for through-hole mounting, it supports a maximum continuous collector current of 40 A, maximum collector-emitter voltage of 600 V, and a maximum power dissipation of 306 W. The IGBT can operate reliably in harsh environments with operating temperatures from -40°C up to 175°C.
The maximum gate-emitter voltage rating of ±20 V ensures robust control, with a switching speed of 227 ns suitable for high-frequency industrial and automotive applications. The device complies with RoHS and JEDEC standards, guaranteeing environmental safety and quality assurance.
Its low electromagnetic interference and short tail current characteristics make it ideal for use in industrial motor drives, power supplies, and renewable energy systems such as solar inverters and wind turbines.
3-pin TO-247 package with through-hole mounting. 40 A maximum continuous collector current and 600 V voltage rating. TrenchStop technology for low saturation voltage and fast switching. Wide operating temperature: -40°C to 175°C.
Maximum gate-emitter voltage ±20 V for gate protection. Low EMI and short tail current for industrial/automotive use. RoHS and JEDEC compliant with energy rating of 2.12 mJ.
Suitable for industrial, automotive, manufacturing, and power electronics applications, the Infineon IKW40N60H3FKSA1 offers high efficiency and reliability in power switching circuits.
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Frequently Asked Questions
The maximum continuous collector current for this model is 40 A.
It has a maximum collector-emitter voltage rating of 600 V.
The maximum power dissipation capability is 306 W.
The IKW40N60H3FKSA1 operates within a temperature range of -40°C to 175°C.
This model uses a 3-pin TO-247 package suitable for through-hole mounting.
It utilizes TrenchStop technology, which ensures very low collector-emitter saturation voltage and minimal turn-off losses.
The maximum gate-emitter voltage rating is ±20 V.
The switching speed is 227 nanoseconds, suitable for fast switching applications.
It is compliant with RoHS and JEDEC standards, ensuring quality and environmental safety.
This model is suitable for industrial motor drives, power supplies, and renewable energy systems such as solar inverters and wind turbines.
The maximum collector-emitter saturation voltage is 2.5 V.
The energy rating of this model is 2.12 mJ.
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